MT40A2G8JC-062E:E

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MT40A2G8JC-062E:E

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IC DRAM 16GBIT PARALLEL 78FBGA

  • ManufacturerMicron Technology Inc.

  • Mfr. Part #MT40A2G8JC-062E:E

  • In Stock2276

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Specifications

Attribute Value
Part Status Obsolete
Base Product Number MT40A2G8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 2G x 8
Memory Interface Parallel
Clock Frequency 1.6 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 78-TFBGA
Supplier Device Package 78-FBGA (9x11)
Packaging Bulk
Access Time 19 ns

Overview

Description

The MT40A2G8JC-062E:E is a type of DRAM (Dynamic Random-Access Memory) module manufactured by Micron Technology. It is a DDR4 SDRAM, which stands for Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory. DDR4 is known for its high speed and efficiency in handling data.
The "2G8" in its name indicates that the memory density is 2 gigabits, and it is organized in an 8-bit configuration. The "062E" specifies the speed grade and latency, which are crucial for determining how fast the memory can process information. The "E" at the end typically refers to a specific revision or batch.
This memory module is commonly used in a variety of computing applications, including PCs, servers, and embedded systems, where reliable and fast data processing is required. DDR4 memory like the MT40A2G8JC-062E:E offers benefits such as lower power consumption and higher data transfer rates compared to its predecessors, making it an essential component in modern high-performance computing environments.

Equivalent

The MT40A2G8JC-062E:E is a DDR4 SDRAM chip manufactured by Micron Technology. Equivalent products can be found from other manufacturers like Samsung, SK Hynix, or Kingston. Look for DDR4 SDRAM chips with similar specifications: 16Gb density, 2,666 MT/s speed, 1.2V voltage, and CL19 latency. Specific model numbers might include Samsung's K4A8G085WB-BCPB or SK Hynix's H5AN8G8NCJ-VKC. Always verify compatibility with your system requirements.

Features

The MT40A2G8JC-062E:E is a DDR4 SDRAM component. It features a memory density of 16Gb (gigabits) organized as 2G x 8. This DRAM module operates with a supply voltage of 1.2V, which is standard for DDR4 memory, providing efficient power consumption. It is designed for applications requiring high bandwidth and large data capacity, suitable for computing and server environments.
This memory module supports a data rate of 3200 MT/s (Mega Transfers per second), ensuring fast data access and improved system performance. It also incorporates features like on-die termination, data bus inversion, and a programmable mode register, enhancing signal integrity and reliability.
The MT40A2G8JC-062E:E is built with a 78-ball FBGA (Fine-pitch Ball Grid Array) package, offering a compact form factor for space-constrained applications. Additionally, it includes features such as bank group architecture and burst length extension, which optimize bandwidth utilization and minimize latency. These attributes make it a robust choice for modern computing demands, providing high performance and energy efficiency.

Pinout

The MT40A2G8JC-062E:E is a DDR4 SDRAM chip manufactured by Micron Technology. It typically comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. However, the specific pin count and functions for each pin in a DDR4 SDRAM chip like this can vary based on the package and design specifics. Generally, the pins will include power supply pins, ground pins, data pins (DQ), address pins (A), control pins (such as CS#, RAS#, CAS#, and WE#), and other necessary connections like clock (CK, CK#) and data strobes (DQS, DQS#).
For precise pin count and detailed functions, it is best to refer directly to the datasheet or technical documentation specific to the MT40A2G8JC-062E:E, as these documents provide comprehensive details on pin configuration, electrical characteristics, and usage guidelines.

Manufacturer

The MT40A2G8JC-062E:E is manufactured by Micron Technology, Inc. Micron is a leading American company specializing in the production of semiconductor devices, primarily focusing on memory and storage solutions. The company is well-known for manufacturing DRAM, NAND, and NOR flash memory, which are crucial components in various electronic devices including computers, smartphones, and servers. Founded in 1978 and headquartered in Boise, Idaho, Micron operates globally with facilities and offices in multiple countries. Their products are integral to a wide range of applications, from personal electronics to large-scale data centers, highlighting Micron's role as a critical player in the technology industry.

Application

The MT40A2G8JC-062E:E is a DRAM module, specifically a DDR4 SDRAM, designed for high-performance computing applications. It is commonly used in data centers, enterprise servers, and high-performance workstations due to its high speed and efficiency. This memory module is suitable for applications requiring large memory capacity and fast data access, such as cloud computing, artificial intelligence, machine learning, and big data analytics. Additionally, it is utilized in networking equipment, storage systems, and virtualization platforms, where reliable and efficient data processing is critical.

Package

The MT40A2G8JC-062E:E is a DRAM chip from Micron Technology, typically used in DDR4 memory modules. It features a FBGA (Fine-Pitch Ball Grid Array) package type, which is a form of surface-mount packaging used for integrated circuits.

Frequently Asked Questions


Q: Is this Micron DDR4 SDRAM suitable for high-speed server applications?
A: Yes, it operates at a 1.6 GHz clock frequency with 19 ns access time, ideal for high-bandwidth server memory.


Q: What is the operating temperature range for the MT40A2G8JC-062E:E?
A: It operates between 0°C and 95°C (TC), suitable for commercial and industrial environments with thermal management.


Q: Does this component support a 1.8V I/O voltage like older DDR3?
A: No, it requires a 1.14V–1.26V supply per DDR4 specifications, offering improved power efficiency over DDR3.


Q: What is the exact memory organization for the 16Gbit device?
A: It is organized as 2G x 8 bits, providing a 16Gbit capacity with an 8-bit parallel data interface.


Q: Can I use this part in a new design if it’s marked as obsolete?
A: Micron lists it as Obsolete; verify availability or consider compatible replacements for long-term production.


Q: What package does this DRAM come in for surface mounting?
A: It is supplied in a 78-TFBGA package (78-FBGA, 9x11mm), suitable for compact PCB layouts.


Q: What is the write cycle time for this DDR4 memory?
A: The write cycle time for word/page is 15ns, enabling fast data programming operations.


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