MT41K256M16HA-125IT:E

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MT41K256M16HA-125IT:E

+BOM

1.283V~1.45V 4Gbit 800MHz DDR3L SDRAM BGA Memory (ICs) RoHS

  • ManufacturerMicron

  • Mfr. Part #MT41K256M16HA-125IT:E

  • In Stock6400

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Specifications

Attribute Value
Packaging BGA
Clock Frequency 800MHz
Memory Format DDR3L SDRAM
Memory Size 4Gbit
Operating temperature -40℃~+95℃
Voltage - Supply 1.283V~1.45V

Overview

Description

The MT41K256M16HA-125IT:E is a high-density DDR3 SDRAM memory chip manufactured by Micron Technology. It features a capacity of 4GB, organized as 256M x 16 bits. Operating at a data rate of 1600 MT/s, it is designed for applications requiring high performance and energy efficiency. The "125" in its part number indicates a maximum clock speed of 1250 MHz, while the "IT" denotes that it is optimized for industrial temperature ranges.
This memory chip is suitable for various applications, including servers, networking equipment, and embedded systems. It has a 78-ball TFBGA package, enabling compact designs. The E at the end signifies compliance with the RoHS directive, ensuring it is free from hazardous substances. Overall, the MT41K256M16HA-125IT:E is a reliable solution for modern computing needs, balancing speed, capacity, and thermal performance.

Equivalent

The MT41K256M16HA-125IT:E is a 4GB DDR3 SDRAM chip. Equivalent products include:
1. Hynix H5TQ4G63AFR-PBA
2. Samsung K4B4G1646F-BCK0
3. Micron MT41K256M16HA-125
4. Elpida EDBS4L032G1AE
5. Nanya NT5CB256M16DP-DI
Ensure compatibility with your specific application requirements before substitution.

Features

The MT41K256M16HA-125IT:E is a DDR3 SDRAM memory chip produced by Micron Technology. It features a density of 4 gigabits (512 megabytes using 16-bit I/O), organized as 256M x 16. Key specifications include:
- Speed: Operates at a data rate of 1600 MT/s.
- Voltage: Requires a supply voltage of 1.5V with a low-power option of 1.35V for reduced energy consumption.
- Package Type: Offered in a 78-ball FBGA (Fine Ball Grid Array) package.
- Thermal: Designed for temperatures ranging from 0°C to 95°C.
- Features: Supports various functionalities such as burst lengths of 8/4, random access, and high-speed data transfer.
- Compatibility: Ideal for use in applications like laptops, desktops, and servers.
This component is suitable for high-performance applications, providing a balance of speed and efficiency in memory performance.

Pinout

The MT41K256M16HA-125IT:E is a 4Gb DDR3 SDRAM memory device organized as 256Meg x 16. It has a total pin count of 78.
The primary functions of the pins include:
- Data Pins (DQ0-DQ15): Used for data input and output.
- Address Pins (A0-A12): Used to select memory locations.
- Control Pins (CS, RAS, CAS, WE): Used to control operations such as read, write, and refresh.
- Clock Pins (CLK, CLK#): Used for synchronization of data transfers.
- Power Pins (VDD, VSS): Provide power supply and ground connection.
- Other Pins (ODT, DM, etc.): For on-die termination and data mask functions.
This device operates at a clock frequency of 125 MHz and supports various DDR3 features, including burst lengths and bank activation.

Manufacturer

The MT41K256M16HA-125IT:E is manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other innovative technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron has grown to become one of the largest manufacturers of semiconductor memory products in the world. The company's offerings cater to a wide range of markets, including computing, networking, automotive, and mobile devices. Micron is known for its commitment to research and development, driving advancements in memory technology and manufacturing processes to meet the evolving needs of consumers and industries alike.

Application

The MT41K256M16HA-125IT:E is a DRAM memory chip commonly used in various applications, including consumer electronics, computing devices, network equipment, and automotive systems. Its high-density architecture makes it suitable for smartphones, tablets, laptops, and desktop computers, providing efficient performance for tasks requiring substantial memory. Additionally, it can be utilized in servers and data centers for improved data processing capabilities. The chip’s low power consumption and high-speed performance also make it ideal for IoT devices and embedded systems, where energy efficiency is crucial.

Package

The MT41K256M16HA-125IT:E is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format.

Frequently Asked Questions


Q: What is the operating temperature range of this DDR3L memory?
A: The MT41K256M16HA-125IT:E operates from -40°C to +95°C, suitable for industrial and extended temperature applications.


Q: What voltage supply does this component require?
A: It requires a nominal voltage of 1.283V to 1.45V, compatible with DDR3L (low voltage) standards for reduced power consumption.


Q: What is the memory format and density of this part?
A: It is a DDR3L SDRAM with a density of 4Gbit (256M x 16 organization), ideal for high-density computing.


Q: Can this memory be used in high-speed embedded systems?
A: Yes, with a clock frequency of 800MHz, it supports fast data rates, suitable for networking and industrial controllers.


Q: What package type does the MT41K256M16HA-125IT:E use?
A: It comes in a BGA (Ball Grid Array) package, enabling compact PCB layout and reliable soldering.


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