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MT60B1G16HD-56B:D
+BOMIC DRAM 16GBIT POD VFBGA
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ManufacturerMicron Technology Inc.
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Mfr. Part #MT60B1G16HD-56B:D
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In Stock4981
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Specifications
| Attribute | Value |
| Part Status | Last Time Buy |
| Base Product Number | MT60B1G16 |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR5 |
| Memory Size | 16Gbit |
| Memory Organization | 1G x 16 |
| Memory Interface | POD |
| Clock Frequency | 2.8 GHz |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Packaging | Tray |
| Access Time | 16 ns |
Overview
Description
This component operates at a frequency of 56 MHz, with a voltage rating of 1.8V, making it suitable for energy-efficient applications. The "D" at the end of the model number usually signifies a specific configuration or grade of the chip, which might pertain to its packaging or performance characteristics.
Overall, the MT60B1G16HD-56B:D is designed to meet the increasing demands for speed and efficiency in modern computing environments, offering reliability and high bandwidth for data-intensive tasks.
Equivalent
1. Hynix H5TQ1G63AFR - 1Gb DDR3
2. Samsung K4B4G1646D - 1Gb DDR3
3. Micron MT41K256M16HA - 1Gb DDR3
Ensure to check specifications like speed, package type, and voltage for compatibility.
Features
- Capacity: 1 GB (Gigabyte) per module.
- Configuration: 16 Meg x 8 bits.
- Data Rate: Supports data rates up to 1066 MT/s (million transfers per second).
- Voltage: Operates at a standard voltage of 1.5V.
- Package Type: Typically available in an 84-ball FBGA (Fine Ball Grid Array) package.
- Pin Count: 60 pins.
- Thermal and Electrical Specifications: Designed for robust thermal performance.
- Timing: Latencies typically range between CAS 6 to CAS 9, depending on the specific configuration.
- Applications: Suitable for various applications including consumer electronics, embedded systems, and industrial devices.
This memory module provides reliable performance for applications requiring moderate memory capacity and speed.
Pinout
The functions of its pins include power supply, ground, data input/output, clock, command, address, and control signals. The pinout facilitates the following major functions:
- Power and Ground: VDD, VSS
- Data I/O: Data bus lines for read/write operations
- Address: Address lines for selecting memory locations
- Control: Signals such as CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable) manage memory access and operations.
For specific pin assignments and functions, refer to the device's datasheet.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MT60B1G16HD-56B:D?
A: It has a 16Gbit density organized as 1G x 16, offering high capacity for demanding applications.
Q: What is the clock frequency and access time for this DDR5 DRAM?
A: The clock frequency is 2.8 GHz, with a fast access time of 16 ns, enabling high-speed data transfer.
Q: What is the operating temperature range for this component?
A: It operates from 0°C to 95°C (TC), suitable for commercial and industrial environments.
Q: What memory interface does this DDR5 SDRAM use?
A: It uses a POD (Pseudo Open Drain) interface, standard for DDR5 memory to ensure signal integrity.
Q: Is this part currently in active production or end-of-life?
A: Its part status is "Last Time Buy," indicating it is nearing discontinuation; plan orders accordingly.
Q: What package type is the MT60B1G16HD-56B:D available in?
A: Based on the parameters, it is supplied in a tray packaging, though the specific package type is not listed.
