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MURT40060
+BOMDIODE MODULE 600V 200A 3TOWER
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #MURT40060
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Package Three Tower
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In Stock8552
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io)(per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 200 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 240 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
