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MURTA20060
+BOMDIODE GEN PURP 600V 100A 3 TOWER
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #MURTA20060
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Datasheet MURTA20060 DataSheet
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Package Three Tower
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In Stock8298
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Cathode |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io)(perDiode) | 100A |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 100 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 25 µA @ 600 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Three Tower |
