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NCE30H10K
+BOM-
ManufacturerWuxi NCE Power Semiconductor
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Mfr. Part #NCE30H10K
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Datasheet NCE30H10K DataSheet
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In Stock21822
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Specifications
| Attribute | Value |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package / Case | TO-252-2(DPAK) |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 100A |
| Pd - Power Dissipation | 110W |
| Drain to Source Voltage (Vdss) | 30V |
| Rds(on) | 5.5mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 3V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 70nC |
| Input Capacitance(Ciss @ Vds) | 3.4nF@25V |
| Reverse Transfer Capacitance (Crss @ Vds) | 308pF |
Overview
Description
Key characteristics of the NCE30H10K include a high drain-source voltage, typically around 100V, and a continuous drain current capability of approximately 30A, making it suitable for high-power applications. It features low on-resistance, which helps in minimizing power loss and improving efficiency in switching operations. The transistor is generally housed in a TO-220 package, which aids in heat dissipation.
The NCE30H10K is favored for its fast switching speeds and robust thermal performance. Engineers might select this MOSFET for designs that require efficient energy usage and effective heat management under high-load conditions. It is essential to consult the datasheet for specific ratings and electrical characteristics to ensure it meets the requirements of a particular application.
Equivalent
Features
1. Voltage and Current Rating: It typically supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of around 30A, making it suitable for medium to high power applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_DS(on)), which minimizes power loss and heat generation, enhancing efficiency.
3. Fast Switching: It offers fast switching speeds, which is beneficial for applications requiring quick transitions, such as in power supplies and converters.
4. Thermal Performance: Designed with good thermal performance, it can handle higher power levels without overheating, aided by appropriate heat sinking.
5. Package Type: The device is often available in a standard TO-220 package, providing ease of mounting and good heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power management systems.
These characteristics make the NCE30H10K a versatile component for various electronic and industrial applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current enters the MOSFET from the load. It is one of the two terminals that handle the high current through the device.
3. Source (S): The source is the terminal through which the main current exits the MOSFET. It is connected to ground in most applications.
The NCE30H10K is designed for high-efficiency power management applications and is often used in power conversion and relay driving due to its high current and voltage handling capabilities. However, it's important to refer to the specific datasheet for precise details on electrical characteristics and pin configuration, as variations may exist.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power regulation.
2. Motor Control: Suitable for controlling motors in automotive and industrial applications due to its high efficiency.
3. Switching Applications: Ideal for switching operations in inverters and battery management systems.
4. Load Switching: Employed in circuits requiring high-speed and reliable load switching.
5. Consumer Electronics: Utilized in devices like LED drivers and power adapters for enhanced performance.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.