Specifications
| Attribute | Value |
| Package / Case | Strip |
| Part Status | Obsolete |
| Transistor Type | HFET |
| Frequency | 12GHz |
| Gain | 13.5dB |
| Voltage - Test | 2 V |
| Current Rating (Amps) | 15mA |
| Noise Figure | 0.35dB |
| Current - Test | 10 mA |
| Voltage - Rated | 4 V |
Overview
Description
Introduction to NE3210S01
NE3210S01 is a low-noise, high-frequency transistor designed for RF and microwave applications. It features excellent noise performance, high gain, and stability, making it ideal for amplifiers, oscillators, and mixers in communication systems.
Key specifications:
- Frequency Range: Up to 8 GHz
- Noise Figure: As low as 0.5 dB
- Gain: High (typically 10 dB at 2 GHz)
- Package: SOT-343 (small form factor)
Common uses include LNA (low-noise amplifier) designs in satellite receivers, radar, and wireless infrastructure. Its robust performance and compact size make it suitable for high-frequency circuits requiring minimal signal degradation.
For optimal performance, proper biasing and impedance matching are recommended. Refer to the datasheet for detailed application guidelines.
NE3210S01 is a low-noise, high-frequency transistor designed for RF and microwave applications. It features excellent noise performance, high gain, and stability, making it ideal for amplifiers, oscillators, and mixers in communication systems.
Key specifications:
- Frequency Range: Up to 8 GHz
- Noise Figure: As low as 0.5 dB
- Gain: High (typically 10 dB at 2 GHz)
- Package: SOT-343 (small form factor)
Common uses include LNA (low-noise amplifier) designs in satellite receivers, radar, and wireless infrastructure. Its robust performance and compact size make it suitable for high-frequency circuits requiring minimal signal degradation.
For optimal performance, proper biasing and impedance matching are recommended. Refer to the datasheet for detailed application guidelines.
Features
The NE3210S01 is a high-performance GaAs HJ-FET (Heterojunction Field-Effect Transistor) designed for low-noise amplification in microwave applications.
Key Features:
- Frequency Range: 0.5–12 GHz
- Low Noise Figure: 0.5 dB (typ.) @ 2 GHz, 0.7 dB (typ.) @ 12 GHz
- High Gain: 14 dB (typ.) @ 2 GHz, 9 dB (typ.) @ 12 GHz
- High Linearity (OIP3): +25 dBm (typ.) @ 2 GHz
- Low Power Consumption: 15 mA @ 2 V (typ.)
- Stable Operation: Unconditionally stable across the frequency range
- Compact Package: SOT-343 (4-pin) for easy integration
Ideal for LNA (Low-Noise Amplifier) applications in satellite communications, radar, and wireless systems.
Key Features:
- Frequency Range: 0.5–12 GHz
- Low Noise Figure: 0.5 dB (typ.) @ 2 GHz, 0.7 dB (typ.) @ 12 GHz
- High Gain: 14 dB (typ.) @ 2 GHz, 9 dB (typ.) @ 12 GHz
- High Linearity (OIP3): +25 dBm (typ.) @ 2 GHz
- Low Power Consumption: 15 mA @ 2 V (typ.)
- Stable Operation: Unconditionally stable across the frequency range
- Compact Package: SOT-343 (4-pin) for easy integration
Ideal for LNA (Low-Noise Amplifier) applications in satellite communications, radar, and wireless systems.
Pinout
The NE3210S01 is a 4-pin low-noise GaAs FET (Field-Effect Transistor) designed for microwave applications.
Pin Functions:
1. Gate (G) – Input terminal for RF signals.
2. Drain (D) – Output terminal, biased for amplification.
3. Source (S) – Ground reference (common terminal).
4. Case (C) – Typically connected to the ground for shielding.
It operates in L-band to X-band frequencies (1–12 GHz) and is commonly used in low-noise amplifiers (LNAs) and RF front-end circuits.
Pin Functions:
1. Gate (G) – Input terminal for RF signals.
2. Drain (D) – Output terminal, biased for amplification.
3. Source (S) – Ground reference (common terminal).
4. Case (C) – Typically connected to the ground for shielding.
It operates in L-band to X-band frequencies (1–12 GHz) and is commonly used in low-noise amplifiers (LNAs) and RF front-end circuits.
Manufacturer
The NE3210S01 is a pseudomorphic high electron mobility transistor (PHEMT) manufactured by NEC Corporation (now part of Renesas Electronics after mergers).
NEC (Nippon Electric Company) was a leading Japanese electronics and semiconductor company known for telecommunications, computing, and semiconductor devices. Renesas Electronics, formed through mergers involving NEC Electronics, continues to produce advanced semiconductor components, including RF and microwave devices like the NE3210S01.
The company specializes in high-performance analog and mixed-signal solutions for communications, automotive, and industrial applications.
NEC (Nippon Electric Company) was a leading Japanese electronics and semiconductor company known for telecommunications, computing, and semiconductor devices. Renesas Electronics, formed through mergers involving NEC Electronics, continues to produce advanced semiconductor components, including RF and microwave devices like the NE3210S01.
The company specializes in high-performance analog and mixed-signal solutions for communications, automotive, and industrial applications.
Package
The NE3210S01 is a pseudomorphic high electron mobility transistor (PHEMT) in a surface-mount plastic package (SOT-89). It is designed for low-noise, high-frequency applications like microwave amplifiers. The SOT-89 package offers compact size, good thermal performance, and ease of PCB integration. Key specs include 0.5–12 GHz operation and low noise figure (~0.5 dB at 2 GHz).
