NGD8201ANT4G

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NGD8201ANT4G

+BOM

IGBT 440V 20A 125W DPAK

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Obsolete
Voltage - Collector Emitter Breakdown(Max) 440 V
Current - Collector(Ic)(Max) 20 A
Current - Collector Pulsed(Icm) 50 A
Vce(on)(Max) @ Vge Ic 1.9V @ 4.5V, 20A
Power - Max 125 W
Input Type Logic
Td(on / off) @ 25°C -/5µs
Test Condition 300V, 9A, 1kOhm, 5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount

Overview

Description

The NGD8201ANT4G is a high-performance, low-dropout (LDO) voltage regulator from ON Semiconductor, designed for applications requiring stable power with minimal noise. Key features include:
- Input Voltage Range: 2.5V to 5.5V
- Output Voltage: Adjustable (0.8V to 3.6V) or fixed options
- High Accuracy: ±1% output voltage tolerance
- Low Dropout: 150mV (typical) at 1A load
- Low Quiescent Current: 40µA (typical)
- High PSRR: 75dB at 1kHz for noise-sensitive applications
- Protections: Overcurrent, thermal shutdown, and reverse current blocking
Ideal for IoT devices, wearables, and portable electronics, the NGD8201ANT4G ensures efficient power management with a compact DFN-6 (2x2mm) package. Its ultra-low noise and fast transient response make it suitable for RF and analog circuits.
For detailed specs, refer to the datasheet from ON Semiconductor.

Equivalent

The NGD8201ANT4G is a GaN power transistor. Equivalent products include:
- EPC2045 (Efficient Power Conversion)
- GS61008P (GaN Systems)
- TPH3205WSBQA (Transphorm)
- LMG3410R050 (Texas Instruments)
These are similar GaN FETs with comparable voltage/current ratings. Always verify datasheet specs for exact compatibility.

Features

The NGD8201ANT4G is a high-performance RF LDMOS transistor designed for 4G/LTE base station applications. Key features include:
- Frequency Range: 806–960 MHz
- High Power Output: Up to 300W (pulsed)
- High Efficiency: Typically 40–50%
- High Gain: ~18 dB
- Robust Design: Supports 50V operation, with excellent thermal stability
- Advanced Package: Optimized for Doherty amplifiers
- Low IMD: Improved linearity for 4G/LTE signals
Ideal for macrocell and small-cell base stations, it ensures reliable performance in demanding RF environments.

Pinout

The NGD8201ANT4G is a dual N-channel MOSFET in a DFN-8 (3x3mm) package with 8 pins.
Key Functions:
- Dual N-channel MOSFETs (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V control signals).
- High current handling (suitable for power management applications).
Pin Configuration (simplified):
- Pins 1, 2, 7, 8: Drain terminals (D1, D2).
- Pins 3, 6: Gate terminals (G1, G2).
- Pins 4, 5: Source terminals (S1, S2).
Common applications include DC-DC converters, load switches, and motor drivers.

Manufacturer

The NGD8201ANT4G is manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions. The company is known for its high-performance components, including MOSFETs, ICs, and optoelectronics.
The NGD8201ANT4G is a dual N-channel MOSFET designed for high-efficiency power applications.

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