Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 760mA (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 360mOhm @ 350mA, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.1 nC @ 4.5 V |
| Vgs(Max) | ±6V |
| InputCapacitance(Ciss)(Max)@Vds | 156 pF @ 5 V |
| PowerDissipation(Max) | 301mW (Tj) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-75, SOT-416 |
Overview
Description
The NTA4151PT1G is a type of NPN Bipolar Junction Transistor (BJT) used in electronic circuits. It is manufactured by ON Semiconductor and is often utilized for switching and amplification purposes. The transistor is designed to handle low to medium power applications, making it suitable for a range of uses in consumer electronics, automotive systems, and industrial applications.
Key features of the NTA4151PT1G include:
- Low Saturation Voltage: This characteristic allows the transistor to operate efficiently with minimal power loss.
- High Current Gain (hFE): The transistor offers a high level of current amplification, which is beneficial for applications that require strong signal amplification.
- SOT-23 Package: It comes in a compact, surface-mount package that is suitable for space-constrained applications.
- Thermal Stability: The device is designed to maintain performance over a range of temperatures, making it reliable in various environmental conditions.
Overall, the NTA4151PT1G is a versatile component ideal for various applications where efficient power handling and amplification are needed.
Key features of the NTA4151PT1G include:
- Low Saturation Voltage: This characteristic allows the transistor to operate efficiently with minimal power loss.
- High Current Gain (hFE): The transistor offers a high level of current amplification, which is beneficial for applications that require strong signal amplification.
- SOT-23 Package: It comes in a compact, surface-mount package that is suitable for space-constrained applications.
- Thermal Stability: The device is designed to maintain performance over a range of temperatures, making it reliable in various environmental conditions.
Overall, the NTA4151PT1G is a versatile component ideal for various applications where efficient power handling and amplification are needed.
Equivalent
The NTA4151PT1G is a P-channel MOSFET manufactured by ON Semiconductor. Equivalent products often depend on similar electrical characteristics such as voltage, current ratings, and package type. Possible equivalents include:
1. SI2319DS from Vishay
2. FDN5618P from ON Semiconductor (within the same family)
3. NTGS3441PT1G from ON Semiconductor
4. BSS84 from Infineon
Always verify specifications and performance in the respective datasheets to ensure compatibility.
1. SI2319DS from Vishay
2. FDN5618P from ON Semiconductor (within the same family)
3. NTGS3441PT1G from ON Semiconductor
4. BSS84 from Infineon
Always verify specifications and performance in the respective datasheets to ensure compatibility.
Features
The NTA4151PT1G is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplifier and switching applications. Key features include:
1. Package Type: It comes in a compact SOT-23 package, ideal for space-constrained applications.
2. Collector-Emitter Voltage (Vceo): It supports a maximum voltage of -50V, making it suitable for moderate voltage applications.
3. Collector Current (Ic): The device can handle up to -150mA of current.
4. Power Dissipation: It has a power dissipation rating of 225mW, which is adequate for low-power applications.
5. Transition Frequency (fT): The transistor offers a transition frequency of approximately 150MHz, supporting RF and high-speed switching applications.
6. Gain (hFE): Provides a DC current gain range typically between 100 and 300, facilitating amplification tasks.
7. Temperature Range: Operates efficiently over a temperature range of -55°C to +150°C, ensuring reliability in various environmental conditions.
These features make the NTA4151PT1G a versatile choice for designers looking for efficient performance in compact, low-power electronic circuits.
1. Package Type: It comes in a compact SOT-23 package, ideal for space-constrained applications.
2. Collector-Emitter Voltage (Vceo): It supports a maximum voltage of -50V, making it suitable for moderate voltage applications.
3. Collector Current (Ic): The device can handle up to -150mA of current.
4. Power Dissipation: It has a power dissipation rating of 225mW, which is adequate for low-power applications.
5. Transition Frequency (fT): The transistor offers a transition frequency of approximately 150MHz, supporting RF and high-speed switching applications.
6. Gain (hFE): Provides a DC current gain range typically between 100 and 300, facilitating amplification tasks.
7. Temperature Range: Operates efficiently over a temperature range of -55°C to +150°C, ensuring reliability in various environmental conditions.
These features make the NTA4151PT1G a versatile choice for designers looking for efficient performance in compact, low-power electronic circuits.
Pinout
The NTA4151PT1G is a P-Channel MOSFET with a single MOSFET in a package. It generally comes in a SOT-23 package, which typically features 3 pins. The pin functions for this type of MOSFET are as follows:
1. Source (Pin 1): This is the terminal through which the charge carriers (holes for a P-Channel MOSFET) enter the MOSFET. It is typically connected to the load.
2. Gate (Pin 2): This pin is used to control the MOSFET’s switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
3. Drain (Pin 3): This is the terminal through which the charge carriers exit the MOSFET. It is typically connected to the power supply or ground.
The NTA4151PT1G's primary function is to act as a switch or amplifier in electronic circuits, providing efficient power control with low gate charge and on-resistance, making it suitable for portable and battery-powered applications.
1. Source (Pin 1): This is the terminal through which the charge carriers (holes for a P-Channel MOSFET) enter the MOSFET. It is typically connected to the load.
2. Gate (Pin 2): This pin is used to control the MOSFET’s switching operation. Applying a voltage to the gate allows current to flow between the source and drain.
3. Drain (Pin 3): This is the terminal through which the charge carriers exit the MOSFET. It is typically connected to the power supply or ground.
The NTA4151PT1G's primary function is to act as a switch or amplifier in electronic circuits, providing efficient power control with low gate charge and on-resistance, making it suitable for portable and battery-powered applications.
Manufacturer
The NTA4151PT1G is manufactured by ON Semiconductor. ON Semiconductor is a company that specializes in the design and manufacture of semiconductor components. They provide a wide range of products including power and signal management, logic, discrete, and custom devices for various applications in sectors such as automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. The company is known for its focus on energy-efficient and sustainable solutions.
Application
The NTA4151PT1G is a dual N-channel MOSFET used primarily for switching applications. Its key application areas include:
1. Power Management: Utilized in DC-DC converters and voltage regulation modules for efficient power management in electronic devices.
2. Load Switching: Employed in switching circuits for controlling power to various loads in consumer electronics.
3. Level Shifting: Helpful in shifting voltage levels between different electronic components, especially in mixed-signal circuits.
4. Signal Switching: Used in analog and digital signal switching applications.
5. Battery-Powered Devices: Suitable for portable electronics, where efficient power usage is critical.
Its small package and low on-resistance make it ideal for space-constrained applications.
1. Power Management: Utilized in DC-DC converters and voltage regulation modules for efficient power management in electronic devices.
2. Load Switching: Employed in switching circuits for controlling power to various loads in consumer electronics.
3. Level Shifting: Helpful in shifting voltage levels between different electronic components, especially in mixed-signal circuits.
4. Signal Switching: Used in analog and digital signal switching applications.
5. Battery-Powered Devices: Suitable for portable electronics, where efficient power usage is critical.
Its small package and low on-resistance make it ideal for space-constrained applications.
Package
The NTA4151PT1G is a MOSFET transistor, and it comes in a SC-75 package type, which is a small, surface-mount package suitable for compact electronic designs.
