Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 15.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 150mOhm @ 7.5A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 26 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1190 pF @ 25 V |
| Power Dissipation (Max) | 65W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Overview
Description
The NTD20P06LT4G is a P-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -20A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 36mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2V
- Compact Package: DPAK (TO-252) for efficient PCB mounting
Ideal for load switching, DC-DC converters, and battery management due to its low power loss and high efficiency. Suitable for automotive, industrial, and consumer electronics.
For detailed specs, refer to the datasheet.
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -20A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 36mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2V
- Compact Package: DPAK (TO-252) for efficient PCB mounting
Ideal for load switching, DC-DC converters, and battery management due to its low power loss and high efficiency. Suitable for automotive, industrial, and consumer electronics.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NTD20P06LT4G (P-channel MOSFET, 20V, 6A) include:
- IRF9Z34N (P-channel, 20V, 8A)
- SI2301DS (P-channel, 20V, 2.3A)
- FQP27P06 (P-channel, 60V, 27A, higher rating)
- AO3401 (P-channel, 30V, 4A)
Check datasheets for exact compatibility in your circuit.
- IRF9Z34N (P-channel, 20V, 8A)
- SI2301DS (P-channel, 20V, 2.3A)
- FQP27P06 (P-channel, 60V, 27A, higher rating)
- AO3401 (P-channel, 30V, 4A)
Check datasheets for exact compatibility in your circuit.
Features
The NTD20P06LT4G is a P-channel MOSFET with the following key features:
- Voltage Rating: -60V drain-to-source (VDSS)
- Current Rating: -20A continuous drain current (ID)
- Low On-Resistance: 50mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -2V to -4V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 50W (TC = 25°C)
- Package: DPAK (TO-252) for compact, surface-mount applications
- Applications: Power management, load switching, DC-DC converters
Designed for high efficiency and reliability in low-voltage systems.
- Voltage Rating: -60V drain-to-source (VDSS)
- Current Rating: -20A continuous drain current (ID)
- Low On-Resistance: 50mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -2V to -4V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 50W (TC = 25°C)
- Package: DPAK (TO-252) for compact, surface-mount applications
- Applications: Power management, load switching, DC-DC converters
Designed for high efficiency and reliability in low-voltage systems.
Pinout
The NTD20P06LT4G is a P-channel MOSFET with the following key specifications:
- Pin Count: 3 pins (TO-252 / DPAK package: Gate, Drain, Source)
- Function: Designed for power switching applications, it features:
- -20V drain-source voltage (VDS)
- -20A continuous drain current (ID)
- Low on-resistance (RDS(on)): ~50mΩ at VGS = -10V
- Logic-level gate drive (fully enhanced at VGS = -4.5V)
Common uses include load switching, power management, and DC-DC converters.
- Pin Count: 3 pins (TO-252 / DPAK package: Gate, Drain, Source)
- Function: Designed for power switching applications, it features:
- -20V drain-source voltage (VDS)
- -20A continuous drain current (ID)
- Low on-resistance (RDS(on)): ~50mΩ at VGS = -10V
- Logic-level gate drive (fully enhanced at VGS = -4.5V)
Common uses include load switching, power management, and DC-DC converters.
Application
The NTD20P06LT4G is a P-channel MOSFET commonly used in:
1. Power Management – Switching and regulation in DC-DC converters, load switches, and battery protection circuits.
2. Motor Control – Driving small motors in automotive, industrial, and consumer applications.
3. Automotive Systems – Electronic control units (ECUs), lighting, and infotainment power switching.
4. Consumer Electronics – Power distribution in devices like laptops, smartphones, and gaming consoles.
5. Industrial Applications – Relay replacements and low-side/high-side switching in automation systems.
Its low on-resistance (RDS(on)) and compact package (DPAK) make it suitable for efficient power handling in space-constrained designs.
1. Power Management – Switching and regulation in DC-DC converters, load switches, and battery protection circuits.
2. Motor Control – Driving small motors in automotive, industrial, and consumer applications.
3. Automotive Systems – Electronic control units (ECUs), lighting, and infotainment power switching.
4. Consumer Electronics – Power distribution in devices like laptops, smartphones, and gaming consoles.
5. Industrial Applications – Relay replacements and low-side/high-side switching in automation systems.
Its low on-resistance (RDS(on)) and compact package (DPAK) make it suitable for efficient power handling in space-constrained designs.
Package
The NTD20P06LT4G is a P-channel MOSFET housed in a D-PAK (TO-252) surface-mount package. This package type offers efficient thermal performance and is commonly used for power applications. Key features include a compact design, three leads (gate, drain, source), and a tab for heat dissipation. Suitable for high-current and low-voltage applications.
