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NTF5P03T3G
+BOMMOSFET P-CH 30V 3.7A SOT223
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Manufactureronsemi
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Mfr. Part #NTF5P03T3G
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Datasheet NTF5P03T3G DataSheet
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In Stock24835
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Specifications
| Attribute | Value |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 3.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 5.2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 950 pF @ 25 V |
| Power Dissipation (Max) | 1.56W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
Overview
Description
NTF5P03T3G appears to be a specific code or identifier that might relate to a specialized product, model, or concept not widely recognized in general databases or common knowledge. Without specific context or documentation, it's challenging to provide a precise introduction. It could denote anything from a technical product, such as an electronic component, software version, or internal project code, to a course code or event identifier.
If NTF5P03T3G is associated with a particular field or industry, it would be important to consult relevant industry resources, documentation, or contact a knowledgeable professional in that area for a detailed introduction. For example, if it pertains to electronics, checking with manufacturers or technical databases might yield more information. If it's related to academia or courses, contacting the institution or checking academic platforms could help. Providing additional context or checking specific resources in the relevant sector could facilitate a more detailed understanding.
If NTF5P03T3G is associated with a particular field or industry, it would be important to consult relevant industry resources, documentation, or contact a knowledgeable professional in that area for a detailed introduction. For example, if it pertains to electronics, checking with manufacturers or technical databases might yield more information. If it's related to academia or courses, contacting the institution or checking academic platforms could help. Providing additional context or checking specific resources in the relevant sector could facilitate a more detailed understanding.
Equivalent
The NTF5P03T3G is a P-channel MOSFET produced by ON Semiconductor. Equivalent products with similar specifications include:
1. IRF9540N by Infineon Technologies
2. FQP27P06 by ON Semiconductor
3. SI7467DP by Vishay
4. BSS84 by Fairchild (now part of ON Semiconductor)
5. AO3401 by Alpha & Omega Semiconductor
These equivalents should be verified for specific electrical characteristics and package compatibility.
1. IRF9540N by Infineon Technologies
2. FQP27P06 by ON Semiconductor
3. SI7467DP by Vishay
4. BSS84 by Fairchild (now part of ON Semiconductor)
5. AO3401 by Alpha & Omega Semiconductor
These equivalents should be verified for specific electrical characteristics and package compatibility.
Features
The NTF5P03T3G is an N-channel MOSFET transistor known for its efficiency and performance in various applications. Key features include:
1. Low On-Resistance: It has a low R_DS(on) resistance, which minimizes power loss and improves efficiency in power management applications.
2. High Drain Current Capability: Capable of handling high drain current, making it suitable for high-power applications.
3. Fast Switching Speed: Provides quick switching capabilities, enhancing performance in applications that require rapid on/off states.
4. Compact Package: Typically available in a compact SOT-23 package, which saves space on circuit boards and is suitable for portable and small devices.
5. Robust Design: Designed to withstand high temperatures and voltages, ensuring reliability and longevity in various environments.
6. Low Gate Charge: This feature reduces the drive requirements, making it easier to control and more efficient in switching applications.
These features make the NTF5P03T3G ideal for use in power management, load switching, and DC-DC conversion applications.
1. Low On-Resistance: It has a low R_DS(on) resistance, which minimizes power loss and improves efficiency in power management applications.
2. High Drain Current Capability: Capable of handling high drain current, making it suitable for high-power applications.
3. Fast Switching Speed: Provides quick switching capabilities, enhancing performance in applications that require rapid on/off states.
4. Compact Package: Typically available in a compact SOT-23 package, which saves space on circuit boards and is suitable for portable and small devices.
5. Robust Design: Designed to withstand high temperatures and voltages, ensuring reliability and longevity in various environments.
6. Low Gate Charge: This feature reduces the drive requirements, making it easier to control and more efficient in switching applications.
These features make the NTF5P03T3G ideal for use in power management, load switching, and DC-DC conversion applications.
Pinout
The NTF5P03T3G is a power MOSFET, specifically a P-channel MOSFET. It typically comes in a standard SOT-223 package, which has 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
2. Drain (D): This is where the load current flows out of the MOSFET. In P-channel MOSFETs, the current flows from source to drain.
3. Source (S): The source is where the current enters the MOSFET. For a P-channel MOSFET, the source is typically connected to a positive voltage.
These pins allow the MOSFET to function as an electronic switch or amplifier within circuits, depending on the application. The specific characteristics, such as on-resistance and maximum current, will be detailed in the datasheet for precise applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
2. Drain (D): This is where the load current flows out of the MOSFET. In P-channel MOSFETs, the current flows from source to drain.
3. Source (S): The source is where the current enters the MOSFET. For a P-channel MOSFET, the source is typically connected to a positive voltage.
These pins allow the MOSFET to function as an electronic switch or amplifier within circuits, depending on the application. The specific characteristics, such as on-resistance and maximum current, will be detailed in the datasheet for precise applications.
Manufacturer
The NTF5P03T3G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor supplier company that designs and manufactures a wide range of semiconductor components and solutions. Their products include power and signal management, logic, discrete, and custom devices for various industries, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. onsemi focuses on providing high-performance, energy-efficient solutions to address the challenges in electronics and support sustainable ecosystems.
Application
The NTF5P03T3G is a N-channel MOSFET commonly used in various electronic applications. Its primary uses include power management systems, DC-DC converters, and load switching. It is also utilized in motor control circuits, battery-powered devices, and lighting systems. The MOSFET's low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient power delivery and minimal energy losses. Additionally, it can be found in consumer electronics, telecommunications equipment, and automotive applications, where compact and efficient switching components are essential.
Package
The NTF5P03T3G is a MOSFET transistor package. Specifically, it is available in a SOT-23 package type, which is a small-outline, surface-mount technology (SMT) package commonly used for housing discrete semiconductor components.
