NTJD2152PT1G

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NTJD2152PT1G

+BOM

MOSFET 2P-CH 8V 0.775A SOT-363

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Specifications

Attribute Value
Supplier onsemi,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain(Id) @ 25°C 775mA
Rds On(Max) @ Id Vgs 300mOhm @ 570mA, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 225pF @ 8V
Power - Max 270mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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