Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 295mA |
| Rds On(Max) @ Id Vgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.9nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 26pF @ 20V |
| Power - Max | 250mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
The NTJD5121NT1G is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 4.5 mΩ at VGS = 10 V, reducing conduction losses.
- High Current Handling: Supports up to 100 A (pulsed) for robust performance.
- Low Gate Charge (QG): Enhances switching efficiency.
- Compact Package: DFN5 (5x6 mm) for space-constrained designs.
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its AEC-Q101 qualification ensures reliability for automotive use.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): Typically 4.5 mΩ at VGS = 10 V, reducing conduction losses.
- High Current Handling: Supports up to 100 A (pulsed) for robust performance.
- Low Gate Charge (QG): Enhances switching efficiency.
- Compact Package: DFN5 (5x6 mm) for space-constrained designs.
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its AEC-Q101 qualification ensures reliability for automotive use.
For detailed specs, refer to the datasheet.
Features
The NTJD5121NT1G is a dual N-channel MOSFET designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 12 mΩ at VGS = 4.5 V, reducing power loss.
- Low Gate Charge (Qg): Enhances fast switching performance.
- Compact Package: DFN-8 (3x3mm), space-saving for portable devices.
- Low Threshold Voltage (VGS(th)): ~1 V, suitable for low-voltage drive circuits.
- High Current Handling: Up to 6.5 A continuous drain current (ID).
- Optimized for Battery-Powered Devices: Ideal for load switches, power management, and DC-DC converters.
Applications include smartphones, tablets, and other portable electronics.
- Low On-Resistance (RDS(on)): Typically 12 mΩ at VGS = 4.5 V, reducing power loss.
- Low Gate Charge (Qg): Enhances fast switching performance.
- Compact Package: DFN-8 (3x3mm), space-saving for portable devices.
- Low Threshold Voltage (VGS(th)): ~1 V, suitable for low-voltage drive circuits.
- High Current Handling: Up to 6.5 A continuous drain current (ID).
- Optimized for Battery-Powered Devices: Ideal for load switches, power management, and DC-DC converters.
Applications include smartphones, tablets, and other portable electronics.
Pinout
The NTJD5121NT1G is a dual N-channel MOSFET in a SOT-563 (6-pin) package.
Pin Functions:
1. Gate 1 (G1) – Controls MOSFET 1.
2. Source 1 (S1) – Source terminal for MOSFET 1.
3. Drain 1 (D1) – Drain terminal for MOSFET 1.
4. Drain 2 (D2) – Drain terminal for MOSFET 2.
5. Source 2 (S2) – Source terminal for MOSFET 2.
6. Gate 2 (G2) – Controls MOSFET 2.
Key Features:
- Low on-resistance (RDS(on)).
- Designed for high-efficiency switching in portable devices.
- Small footprint for space-constrained applications.
Pin Functions:
1. Gate 1 (G1) – Controls MOSFET 1.
2. Source 1 (S1) – Source terminal for MOSFET 1.
3. Drain 1 (D1) – Drain terminal for MOSFET 1.
4. Drain 2 (D2) – Drain terminal for MOSFET 2.
5. Source 2 (S2) – Source terminal for MOSFET 2.
6. Gate 2 (G2) – Controls MOSFET 2.
Key Features:
- Low on-resistance (RDS(on)).
- Designed for high-efficiency switching in portable devices.
- Small footprint for space-constrained applications.
Manufacturer
The NTJD5121NT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor specializes in energy-efficient innovations, offering a wide range of products, including power management, analog, and sensor technologies. The company serves industries like automotive, industrial, and consumer electronics, focusing on reliability and sustainability.
The NTJD5121NT1G is a dual N-channel MOSFET designed for high-efficiency switching applications.
ON Semiconductor specializes in energy-efficient innovations, offering a wide range of products, including power management, analog, and sensor technologies. The company serves industries like automotive, industrial, and consumer electronics, focusing on reliability and sustainability.
The NTJD5121NT1G is a dual N-channel MOSFET designed for high-efficiency switching applications.
