NTMFD4C85NT1G

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NTMFD4C85NT1G

+BOM

MOSFET 2N-CH 30V 8DFN

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Specifications

Attribute Value
Supplier onsemi,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 15.4A, 29.7A
Rds On(Max) @ Id Vgs 3mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 32nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1960pF @ 15V
Power - Max 1.13W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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