NTMFD4C86NT1G

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NTMFD4C86NT1G

+BOM

MOSFET 2N-CH 30V 8DFN

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Specifications

Attribute Value
Supplier onsemi,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 11.3A, 18.1A
Rds On(Max) @ Id Vgs 5.4mOhm @ 30A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 22.2nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 1153pF @ 15V
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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