PC28F256P30BFE

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PC28F256P30BFE

+BOM

1.7V~2V 256Mbit 52MHz BGA-64 Memory (ICs) RoHS

  • ManufacturerMicron

  • Mfr. Part #PC28F256P30BFE

  • In Stock23998

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Specifications

Attribute Value
Packaging BGA-64
Clock Frequency 52MHz
Memory Size 256Mbit
Operating temperature -40℃~+85℃
Voltage - Supply 1.7V~2V
Page Programming Time (Tpp) 310us
Program / Erase Cycles 100,000 cycles
Standby Supply Current 65uA

Overview

Description

The PC28F256P30BFE is a flash memory component developed by Intel. It belongs to the P30 family of high-density, high-performance non-volatile memory devices. This specific model offers a capacity of 256 Megabits, organized into blocks for efficient data storage and management. The device is commonly used in embedded systems and applications requiring reliable solid-state storage.
Key features include fast read and write speeds, low power consumption, and robust data integrity, making it suitable for use in various industrial, automotive, and consumer electronics. It supports asynchronous and synchronous read operations, offering flexibility in system design. The device also includes security features such as block locking, ensuring data protection against unauthorized access.
Furthermore, the PC28F256P30BFE operates over a wide range of temperatures, providing versatility in different environmental conditions. Its architecture allows for easy integration into systems requiring firmware updates or data logging capabilities, enhancing overall system functionality.

Equivalent

The PC28F256P30BFE is a 256Mb Intel StrataFlash memory chip. Equivalent products with similar specifications might include:
1. Micron MT28F256P30B - Offers comparable performance and architecture.
2. Spansion S29GL256P - A similar NOR flash memory option.
3. Macronix MX29GL256 - Another alternative with similar capacity and technology.
Always verify pin compatibility and electrical specifications in the respective datasheets before considering as substitutes.

Features

The PC28F256P30BFE is a NAND Flash memory chip designed for use in embedded applications. Key features include:
1. Density: It offers a storage capacity of 256 Mb (megabits), which is equivalent to 32 MB (megabytes).
2. Architecture: This chip is organized in a standard NAND Flash architecture, facilitating efficient storage and retrieval of data.
3. Interface: It supports a parallel interface, which enables faster data transfer rates compared to serial interfaces.
4. Voltage Range: The device operates within a voltage range, typically around 1.8V to 3.3V, ensuring compatibility with a wide range of systems.
5. Speed: It provides fast read and write capabilities, suitable for applications requiring quick data access.
6. Endurance and Reliability: The chip is designed to withstand numerous program/erase cycles, offering high endurance and data retention.
7. Package Type: It is available in a compact package, making it ideal for space-constrained applications.
These features make the PC28F256P30BFE suitable for use in consumer electronics, industrial applications, and other environments where reliable non-volatile storage is necessary.

Pinout

The PC28F256P30BFE is a 256 Mbit (32 MB) flash memory chip from Intel's StrataFlash® Embedded Memory family. This chip comes in a 64-ball Fortified BGA package. The primary function of this flash memory is to store data non-volatility, meaning it retains data even when the power is turned off. It is often used in applications requiring reliable data storage, such as embedded systems, industrial applications, and networking equipment. The device features a multi-level cell (MLC) architecture, which allows it to store more data in the same physical space compared to single-level cell (SLC) designs. Additionally, it supports read-while-write operations, allowing for efficient data management and performance improvements in complex applications.

Manufacturer

The PC28F256P30BFE is a flash memory chip manufactured by Micron Technology, Inc. Micron is a leading American multinational corporation that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its dynamic random-access memory (DRAM), NAND flash memory, and solid-state drives (SSDs). The company plays a significant role in the tech industry, supplying memory products to various sectors, including consumer electronics, mobile devices, data centers, and automotive markets. Micron's innovations and advancements in memory technology contribute significantly to the development of efficient and powerful computing solutions.

Application

The PC28F256P30BFE is a NOR flash memory chip commonly used in applications requiring reliable non-volatile storage. Its primary application areas include embedded systems, where it stores firmware and boot code, and telecommunications, where it supports networking equipment like routers and switches. It is also utilized in automotive systems for engine control units (ECUs) and infotainment systems. Additionally, the chip serves in industrial automation for storing control algorithms and system configurations. Its high-speed read capabilities and data retention make it suitable for consumer electronics, including portable devices and digital cameras. Overall, it is favored in applications demanding durable and fast-access storage solutions.

Package

The PC28F256P30BFE is a 256 Mb (megabit) flash memory chip from Intel's StrataFlash P30 series. It typically comes in a TSOP (Thin Small Outline Package) or BGA (Ball Grid Array) type, designed for high-density and performance applications. The specific package type for this part number is often a TSOP, but it is essential to confirm with the datasheet for precise details.

Frequently Asked Questions


Q: What is the maximum operating frequency of the PC28F256P30BFE?
A: The clock frequency supports up to 52MHz, suitable for high-speed synchronous read operations in embedded applications.


Q: What voltage range does this 256Mbit NOR Flash require?
A: It operates from 1.7V to 2.0V, making it ideal for low-voltage and battery-powered designs.


Q: How many program/erase cycles can this device endure?
A: It supports 100,000 program/erase cycles, ensuring high endurance for code storage and firmware updates.


Q: What is the typical page programming time?
A: The page programming time (Tpp) is 310µs, enabling fast write operations for efficient data storage.


Q: Does it have a low power standby mode?
A: Yes, standby supply current is only 65µA, reducing power consumption when the device is not actively accessed.


Q: What is the operating temperature range?
A: It operates from -40°C to +85°C, suitable for industrial-grade environmental conditions.


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