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PDTA123ES,126
+BOMTRANS PREBIAS PNP 500MW TO92-3
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ManufacturerNXP USA Inc.
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Mfr. Part #PDTA123ES,126
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Datasheet PDTA123ES,126 DataSheet
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Package TO-226-3
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In Stock9268
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Specifications
| Attribute | Value |
| Supplier | NXP USA Inc. |
| Package / Case | Tape & Box (TB) |
| Part Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 2.2 kOhms |
| Resistor - Emitter Base(R2) | 2.2 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 30 @ 20mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff(Max) | 1µA |
| Power - Max | 500 mW |
| Mounting Type | Through Hole |
