PDTB114EUF

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PDTB114EUF

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NOW NEXPERIA PDTB114EUF - SMALL

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector(Ic)(Max) 500 mA
Voltage - Collector Emitter Breakdown(Max) 50 V
Resistor - Base(R1) 10 kOhms
Resistor - Emitter Base(R2) 10 kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 70 @ 50mA, 5V
Vce Saturation(Max) @ Ib Ic 100mV @ 2.5mA, 50mA
Current - Collector Cutoff(Max) 500nA
Frequency - Transition 140 MHz
Power - Max 300 mW
Mounting Type Surface Mount

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