PHN203,518

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PHN203,518

+BOM

MOSFET 2N-CH 30V 6.3A SOT96-1

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Specifications

Attribute Value
Supplier Nexperia USA Inc.,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Bulk
Series TrenchMOS™
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 6.3A
Rds On(Max) @ Id Vgs 30mOhm @ 7A, 10V
Vgs(th)(Max) @ Id 2V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 14.6nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 560pF @ 20V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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