PMDPB38UNE,115

Images are for reference only

PMDPB38UNE,115

+BOM

MOSFET 2N-CH 20V 4A HUSON6

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
Supplier NXP USA Inc.,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 4A
Rds On(Max) @ Id Vgs 46mOhm @ 3A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.4nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 268pF @ 10V
Power - Max 510mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Products related to PMDPB38UNE,115