PMDPB65UP,115

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PMDPB65UP,115

+BOM

MOSFET 2P-CH 20V 3.5A SOT1118

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Specifications

Attribute Value
Supplier NXP USA Inc.,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 3.5A
Rds On(Max) @ Id Vgs 70mOhm @ 1A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 380pF @ 10V
Power - Max 520mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

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