Specifications
| Attribute | Value |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Current - Average Rectified(Io) | 500mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 470 mV @ 500 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V |
| Capacitance @ Vr F | 43pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOD-323 |
Overview
Description
PMEG4005AEAZ is a P-channel enhancement‑mode MOSFET from Nexperia’s PMEG family. It’s intended for low‑voltage DC switching tasks, typically as a compact high‑side switch or protection element (e.g., reverse polarity) in surface‑mount designs. In operation, turn it on by pulling the gate more negative than the source; turn it off by moving the gate toward the source. The device comes in a small SMD package, with ratings and thermal characteristics defined in its datasheet. Key specs to check include VDS (drain‑to‑source voltage), ID (continuous drain current), RDS(on) at your gate drive, VGS(th), input capacitance, and packaging/thermal limits. For exact electrical ratings and package details, consult the PMEG4005AEAZ datasheet and Nexperia’s product page.
Features
PMEG4005AEAZ is a N-channel enhancement-mode MOSFET. Key features:
- VDS = 40 V
- Very low on-resistance (low RDS(on))
- Logic-level gate drive (usable from 4.5–10 V)
- Fast switching with low gate charge
- Robust avalanche rating and durable body diode
- Small 3-pin SOT-23 (or similar) package; RoHS-compliant/Pb-free
- Suitable for high-efficiency switching applications (DC-DC converters, load switches, power management)
- VDS = 40 V
- Very low on-resistance (low RDS(on))
- Logic-level gate drive (usable from 4.5–10 V)
- Fast switching with low gate charge
- Robust avalanche rating and durable body diode
- Small 3-pin SOT-23 (or similar) package; RoHS-compliant/Pb-free
- Suitable for high-efficiency switching applications (DC-DC converters, load switches, power management)
Pinout
Pin count: 2 pins (anode and cathode).
Function: PMEG4005AEAZ is an SMD Schottky barrier diode used for low‑forward‑voltage rectification, clamping/protection and fast switching (e.g., freewheeling, polarity protection, and general low‑voltage rectifier applications).
Function: PMEG4005AEAZ is an SMD Schottky barrier diode used for low‑forward‑voltage rectification, clamping/protection and fast switching (e.g., freewheeling, polarity protection, and general low‑voltage rectifier applications).
Manufacturer
Manufacturer: Vishay Intertechnology.
What kind of company: A global, publicly traded manufacturer of electronic components, including semiconductors and passive devices (diodes, rectifiers, resistors, capacitors, sensors, etc.).
What kind of company: A global, publicly traded manufacturer of electronic components, including semiconductors and passive devices (diodes, rectifiers, resistors, capacitors, sensors, etc.).
Application
PMEG4005AEAZ is a P-channel enhancement‑mode MOSFET for high‑side switching in low‑ to mid‑voltage power management. Typical uses include:
- High‑side power switches/load gating in battery‑powered devices and MCUs
- Input/high‑side FETs in buck/step‑down regulators and DC‑DC converters
- Reverse‑polarity protection and ideal‑diode/OR‑ing of power rails
- LED‑driver stages and other power‑management applications
- Automotive/industrial power‑management circuits requiring fast switching and low Rds(on)
(Check datasheet for exact ratings and package specifics.)
- High‑side power switches/load gating in battery‑powered devices and MCUs
- Input/high‑side FETs in buck/step‑down regulators and DC‑DC converters
- Reverse‑polarity protection and ideal‑diode/OR‑ing of power rails
- LED‑driver stages and other power‑management applications
- Automotive/industrial power‑management circuits requiring fast switching and low Rds(on)
(Check datasheet for exact ratings and package specifics.)
Package
SOD-123 surface-mount package.
