PMT560ENEAX

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PMT560ENEAX

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NEXPERIA PMT560ENEA - 100V N-CHA

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 1.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 715mOhm @ 1.1A, 10V
Vgs(th)(Max) @ Id 2.7V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 4.4 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 112 pF @ 50 V
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223

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