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PMV120ENEAR
+BOMMOSFET N-CH 60V 2.1A TO236AB
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ManufacturerNexperia USA Inc.
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Mfr. Part #PMV120ENEAR
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In Stock5778
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Specifications
| Attribute | Value |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 2.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 123mOhm @ 2.1A, 10V |
| Vgs(th)(Max) @ Id | 2.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.4 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 275 pF @ 30 V |
| Power Dissipation (Max) | 513mW (Ta), 6.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Overview
Description
PMV120ENEAR is a N-channel enhancement-mode power MOSFET in the PMV family (from Nexperia/NXP). It is intended as a fast, efficient switching element in power electronics—common in DC–DC converters, motor drivers, and power supplies. The “120” generally places this device in the 100–120 V class with low on-resistance, suitable for low- to moderate-current switching with a proper gate drive.
The ENEAR suffix denotes a specific variant of the part (variant details such as packaging, temperature range, and environmental/lead-free options). Exact electrical ratings and packaging are defined in the datasheet for PMV120ENEAR.
Key specs to check in the datasheet:
- Vds (drain–source voltage)
- Id (continuous drain current)
- Rds(on) at your gate drive (Vgs)
- Vgs(th), gate charge (Qgs/Qgd)
- Switching times and thermal resistance
Use: as a switch in buck/boost converters, motor controllers, or other high-side/low-side switching applications. For precise figures, consult the PMV120ENEAR datasheet.
The ENEAR suffix denotes a specific variant of the part (variant details such as packaging, temperature range, and environmental/lead-free options). Exact electrical ratings and packaging are defined in the datasheet for PMV120ENEAR.
Key specs to check in the datasheet:
- Vds (drain–source voltage)
- Id (continuous drain current)
- Rds(on) at your gate drive (Vgs)
- Vgs(th), gate charge (Qgs/Qgd)
- Switching times and thermal resistance
Use: as a switch in buck/boost converters, motor controllers, or other high-side/low-side switching applications. For precise figures, consult the PMV120ENEAR datasheet.
Features
PMV120ENEAR is a N-channel, enhancement-mode power MOSFET. Typical features (datasheet dependent):
- High blocking voltage around 120 V
- Power handling in the amp range
- Low on-resistance for efficiency
- Logic-level gate drive (Vgs compatible with 4–10 V)
- Fast switching with low input capacitance
- Avalanche rugged for inductive loads
- RoHS-compliant, Pb-free
- Available in surface-mount packages (e.g., DPAK/TO-252) with standard packaging options
Note: exact values (Rds(on), Id, switching characteristics) vary by revision and package. Please provide the exact datasheet or manufacturer to give precise numbers.
- High blocking voltage around 120 V
- Power handling in the amp range
- Low on-resistance for efficiency
- Logic-level gate drive (Vgs compatible with 4–10 V)
- Fast switching with low input capacitance
- Avalanche rugged for inductive loads
- RoHS-compliant, Pb-free
- Available in surface-mount packages (e.g., DPAK/TO-252) with standard packaging options
Note: exact values (Rds(on), Id, switching characteristics) vary by revision and package. Please provide the exact datasheet or manufacturer to give precise numbers.
Pinout
PMV120ENEAR is a N-channel enhancement-mode power MOSFET in a DPAK (TO-252) package. It has 3 leads plus a drain tab (4 electrical connections in total).
Pinout (front view):
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Tab: Drain (D), connected to Pin 2
Function: Gate controls conduction between Drain and Source; used as a high-current switch.
Pinout (front view):
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
- Tab: Drain (D), connected to Pin 2
Function: Gate controls conduction between Drain and Source; used as a high-current switch.
Application
PMV120ENEAR is a 120 V N-channel power MOSFET. Common application areas:
- Offline switch-mode power supplies and mains adapters (flyback/buck-boost topologies)
- DC-DC converters in desktops, servers, telecom and consumer electronics
- Motor control and inverter drives in appliances and industrial equipment
- Automotive power electronics (buck/boost, lighting, battery-management circuits)
- Solar/energy-storage inverters, EV charging, UPS systems
- General high-side/low-side switching in power-management modules and chargers
Suitable for high-speed, high-voltage switching in compact, cost-sensitive power circuits.
- Offline switch-mode power supplies and mains adapters (flyback/buck-boost topologies)
- DC-DC converters in desktops, servers, telecom and consumer electronics
- Motor control and inverter drives in appliances and industrial equipment
- Automotive power electronics (buck/boost, lighting, battery-management circuits)
- Solar/energy-storage inverters, EV charging, UPS systems
- General high-side/low-side switching in power-management modules and chargers
Suitable for high-speed, high-voltage switching in compact, cost-sensitive power circuits.
Package
I don’t have a definitive record for PMV120ENEAR. The “EAR” suffix often means a lead‑free SMD part supplied in tape‑and‑reel. Please provide the manufacturer or a datasheet link, or check the manufacturer’s product page to confirm the exact package (e.g., SOT‑23 / SOT‑323).
