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QS8M12TCR
+BOMMOSFET N/P-CH 30V 4A TSMT8
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ManufacturerRohm Semiconductor
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Mfr. Part #QS8M12TCR
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Datasheet QS8M12TCR DataSheet
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Package 8-SMD, Flat Lead
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In Stock8115
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Specifications
| Attribute | Value |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 4A |
| Rds On(Max) @ Id Vgs | 42mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 3.4nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 250pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
