R6509END3TL1

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R6509END3TL1

+BOM

650V 9A TO-252, LOW-NOISE POWER

  • ManufacturerRohm Semiconductor

  • Mfr. Part #R6509END3TL1

  • In Stock3960

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 9A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 585mOhm @ 2.8A, 10V
Vgs(th)(Max) @ Id 4V @ 230µA
Gate Charge(Qg)(Max) @ Vgs 24 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 430 pF @ 25 V
Power Dissipation (Max) 94W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252

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