R6520KNZC8

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R6520KNZC8

+BOM

MOSFET N-CH 650V 20A TO3

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Specifications

Attribute Value
Supplier Rohm Semiconductor
Package / Case Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 20A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 205mOhm @ 9.5A, 10V
Vgs(th)(Max) @ Id 5V @ 630µA
Gate Charge(Qg)(Max) @ Vgs 40 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1550 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF