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RDX080N50FU6
+BOMMOSFET N-CH 500V 8A TO220FM
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ManufacturerRohm Semiconductor
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Mfr. Part #RDX080N50FU6
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Datasheet RDX080N50FU6 DataSheet
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In Stock4551
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Specifications
| Attribute | Value |
| Supplier | Rohm Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 850mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 28 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 920 pF @ 25 V |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
