| Attribute |
Value |
| Supplier |
Toshiba Semiconductor and Storage |
| Package / Case |
Tape & Reel (TR) |
| Part Status |
Active |
| Transistor Type |
NPN - Pre-Biased |
| Current - Collector(Ic)(Max) |
800 mA |
| Voltage - Collector Emitter Breakdown(Max) |
50 V |
| Resistor - Base(R1) |
2.2 kOhms |
| Resistor - Emitter Base(R2) |
2.2 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce |
65 @ 100mA, 1V |
| Vce Saturation(Max) @ Ib Ic |
250mV @ 1mA, 50mA |
| Current - Collector Cutoff(Max) |
500nA |
| Frequency - Transition |
300 MHz |
| Power - Max |
200 mW |
| Mounting Type |
Surface Mount |
