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RS1BL M2G
+BOMDIODE GEN PURP 100V 800MA SUBSMA
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ManufacturerTaiwan Semiconductor Corporation
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Mfr. Part #RS1BL M2G
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Datasheet RS1BL M2G DataSheet
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Package DO-219AB
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In Stock7884
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Specifications
| Attribute | Value |
| Supplier | Taiwan Semiconductor Corporation |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified(Io) | 800mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Capacitance @ Vr F | 10pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sub SMA |
