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RUM002N02T2L
+BOMMOSFET N-CH 20V 200MA VMT3
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ManufacturerRohm Semiconductor
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Mfr. Part #RUM002N02T2L
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Datasheet RUM002N02T2L DataSheet
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Package SOT-723-3
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In Stock2271
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.2V, 2.5V |
| Rds On(Max) @ Id Vgs | 1.2Ohm @ 200mA, 2.5V |
| Vgs(th)(Max) @ Id | 1V @ 1mA |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 25 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VMT3 |
Overview
Features
- Voltage Rating: 20V (Drain-Source)
- Current Rating: 60A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 2.0 mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1.0V (typ)
- Fast Switching: Suitable for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and battery protection
This MOSFET is optimized for low-loss, high-current switching in compact designs.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connected to the load (high-voltage side).
3. Source (S) – Connected to ground (low-voltage side).
Key Features:
- 30V Drain-Source Voltage (VDS)
- 2.5mΩ On-Resistance (RDS(on))
- High current handling (up to 100A)
- Low gate charge for fast switching
Commonly used in power management, DC-DC converters, and motor control.
