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SBAV99LT1G
+BOMDIODE ARRAY 100V 215MA SOT23-3
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Manufactureronsemi
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Mfr. Part #SBAV99LT1G
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Datasheet SBAV99LT1G DataSheet
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Package TO-236-3, SC-59, SOT-23-3
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In Stock29126
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Specifications
| Attribute | Value |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Series Connection |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 100 V |
| Current-AverageRectified(Io)(perDiode) | 215mA (DC) |
| Voltage-Forward(Vf)(Max)@If | 1.25 V @ 150 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 6 ns |
| Current-ReverseLeakage@Vr | 1 µA @ 100 V |
| OperatingTemperature-Junction | -65°C ~ 150°C |
| MountingType | Surface Mount |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
Overview
Description
Key features of the SBAV99LT1G include:
1. Fast Switching Speed: Ideal for high-speed signal processing applications.
2. Low Forward Voltage Drop: Enhances efficiency by minimizing power loss during forward conduction.
3. High Conductance: Facilitates effective signal modulation and demodulation.
4. Small Package Size: The SOT-23 packaging supports compact circuit designs, crucial for modern electronic devices.
Applications for the SBAV99LT1G range from consumer electronics to industrial control systems, where efficient and reliable signal management is required. It is widely used by engineers and designers to optimize the performance of electronic circuits.
Equivalent
1. NXP Semiconductors BAV99
2. Diodes Incorporated BAV99
3. Vishay Semiconductors BAV99
4. ON Semiconductor BAW56
5. Rohm Semiconductor EM5130
These equivalents typically share similar electrical characteristics, such as voltage and current ratings, making them suitable substitutes in most applications. Always verify specifications to ensure compatibility with your specific circuit requirements.
Features
1. Configuration: Consists of two diodes in a series configuration.
2. Voltage Rating: Reverse voltage (VR) of 70V.
3. Current Rating: Forward current (IF) of 215 mA.
4. Speed: Fast switching capability, typically with a reverse recovery time (trr) of 4 ns.
5. Power Dissipation: Low power dissipation due to its small size and efficient design.
6. Package: Compact SOT-23 package for space-saving in PCB layout.
7. Operating Temperature: Range typically between -55°C to +150°C, suitable for various environments.
8. Applications: Ideal for high-speed switching in signal processing, voltage clamping, and protection circuits.
9. Compliance: Compliant with RoHS standards, indicating it is free from hazardous substances.
These features make the SBAV99LT1G suitable for applications requiring compact, efficient, and reliable switching components.
Pinout
1. Pin 1: Cathode (D1)
2. Pin 2: Anode (D1) and Anode (D2) - Common Anode
3. Pin 3: Cathode (D2)
This configuration allows the two diodes to share a common anode connection, which is useful in various circuit applications. The SBAV99LT1G is well-suited for high-speed switching, featuring low forward voltage drop and low capacitance, making it ideal for digital and analog signal processing.
Manufacturer
Application
1. High-Speed Switching Circuits: Used in digital circuits for fast signal transition.
2. Signal Processing: Employed in communication equipment for signal modulation and demodulation.
3. Voltage Clamping: Used to protect sensitive components by limiting voltage spikes.
4. High-Frequency Rectification: Utilized in RF and microwave applications for efficient rectification.
5. Logic Circuits: Implemented in digital logic for signal routing and manipulation.
Its small surface-mount package is suitable for compact electronic designs.