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SCT3030ALGC11
+BOMSICFET N-CH 650V 70A TO247N
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ManufacturerRohm Semiconductor
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Mfr. Part #SCT3030ALGC11
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In Stock6257
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Specifications
| Attribute | Value |
| Part Status | Active |
| Base Product Number | SCT3030 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 27A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |
| Power Dissipation (Max) | 262W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package | TO-247-3 |
| Packaging | Tube |
Overview
Description
SCT3030ALGC11 is a silicon carbide (SiC) Schottky barrier diode designed for high-efficiency power applications. With a voltage rating typically around 300V and a current rating of about 30A, it offers low forward voltage drop and minimal reverse recovery time, making it ideal for fast-switching applications.
The diode's SiC material allows for higher thermal conductivity and improved performance under extreme conditions compared to traditional silicon diodes. This results in enhanced energy efficiency and reduced thermal management requirements.
Applications include power supplies, converters, electric vehicles, and renewable energy systems, where efficiency and reliability are critical. The device is packaged to facilitate ease of integration into various electronic systems, supporting both industrial and commercial uses.
Overall, SCT3030ALGC11 represents a significant advancement in power semiconductor technology, providing engineers with a reliable solution for high-performance applications.
The diode's SiC material allows for higher thermal conductivity and improved performance under extreme conditions compared to traditional silicon diodes. This results in enhanced energy efficiency and reduced thermal management requirements.
Applications include power supplies, converters, electric vehicles, and renewable energy systems, where efficiency and reliability are critical. The device is packaged to facilitate ease of integration into various electronic systems, supporting both industrial and commercial uses.
Overall, SCT3030ALGC11 represents a significant advancement in power semiconductor technology, providing engineers with a reliable solution for high-performance applications.
Equivalent
The SCT3030ALGC11 is a silicon carbide (SiC) MOSFET. Equivalent products include the ON Semiconductor NTPW100N75 and the Infineon CoolSiC MOSFETs like the IMW120R045M1. Other alternatives may include Wolfspeed's C3M0030120K and Littelfuse's SiC MOSFETs. Always verify specifications, such as voltage, current, and switching characteristics, to ensure compatibility with your application.
Features
The SCT3030ALGC11 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. Key features include:
1. High Voltage Rating: Typically rated for 1200V, suitable for various high-voltage applications.
2. Low On-Resistance: Offers low R_DS(on), enhancing thermal performance and efficiency.
3. Fast Switching Speed: Designed for fast switching capabilities, reducing switching losses and improving overall system efficiency.
4. High-Temperature Operation: Capable of operating at elevated temperatures, making it ideal for demanding environments.
5. Gate Drive Compatibility: Compatible with standard gate drivers, simplifying circuit design and integration.
6. Robustness: Features inherent ruggedness against voltage spikes and thermal events.
7. High Efficiency: Optimized for reduced conduction and switching losses, ideal for applications like converters and inverters.
These features make the SCT3030ALGC11 suitable for applications in renewable energy systems, industrial drives, and electric vehicles.
1. High Voltage Rating: Typically rated for 1200V, suitable for various high-voltage applications.
2. Low On-Resistance: Offers low R_DS(on), enhancing thermal performance and efficiency.
3. Fast Switching Speed: Designed for fast switching capabilities, reducing switching losses and improving overall system efficiency.
4. High-Temperature Operation: Capable of operating at elevated temperatures, making it ideal for demanding environments.
5. Gate Drive Compatibility: Compatible with standard gate drivers, simplifying circuit design and integration.
6. Robustness: Features inherent ruggedness against voltage spikes and thermal events.
7. High Efficiency: Optimized for reduced conduction and switching losses, ideal for applications like converters and inverters.
These features make the SCT3030ALGC11 suitable for applications in renewable energy systems, industrial drives, and electric vehicles.
Pinout
The SCT3030ALGC11 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used primarily in power management applications. It typically has a pin count of 3. The pins and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is the input for the current. It connects to the ground or negative side of the power supply in a circuit.
The SCT3030ALGC11 is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, inverters, and motor control. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the output current flows out of the MOSFET. It connects to the load in a circuit.
3. Source (S): This pin is the input for the current. It connects to the ground or negative side of the power supply in a circuit.
The SCT3030ALGC11 is designed for applications requiring high efficiency and fast switching, making it suitable for power converters, inverters, and motor control. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The SCT3030ALGC11 is manufactured by the company SCT (Silicon Carbide Technology). SCT specializes in developing and manufacturing advanced semiconductor devices, particularly focusing on Silicon Carbide (SiC) power MOSFETs and related components. These devices are widely used in high-efficiency power conversion applications, including electric vehicles, renewable energy systems, and industrial motor drives.
SCT is known for its innovation in the semiconductor industry, aiming to enhance performance and efficiency while reducing energy losses in power electronics. Their products are designed to meet the growing demand for high-performance solutions in various sectors, including automotive, telecommunications, and consumer electronics.
The SCT3030ALGC11 itself is a SiC MOSFET known for its high voltage and current handling capabilities, making it suitable for demanding applications requiring efficient power management.
SCT is known for its innovation in the semiconductor industry, aiming to enhance performance and efficiency while reducing energy losses in power electronics. Their products are designed to meet the growing demand for high-performance solutions in various sectors, including automotive, telecommunications, and consumer electronics.
The SCT3030ALGC11 itself is a SiC MOSFET known for its high voltage and current handling capabilities, making it suitable for demanding applications requiring efficient power management.
Application
The SCT3030ALGC11 is a high-performance silicon carbide (SiC) MOSFET, primarily used in power electronic applications. Its application areas include electric vehicles (EVs) for traction inverters, renewable energy systems like solar inverters, industrial motor drives, and power supplies. Its high efficiency and thermal performance make it suitable for energy conversion and management systems, enhancing overall system reliability and reducing energy losses. Additionally, it is utilized in fast chargers and high-frequency applications due to its capability to operate at elevated temperatures and voltages.
Package
The SCT3030ALGC11 is packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power semiconductor devices.
