SCT30N120D2

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SCT30N120D2

+BOM

SICFET N-CH 1200V 40A HIP247

  • ManufacturerSTMicroelectronics

  • Mfr. Part #SCT30N120D2

  • In Stock2133

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Specifications

Attribute Value
Supplier STMicroelectronics
Package Tray
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 20V
RdsOn(Max)@IdVgs 100mOhm @ 20A, 20V
Vgs(th)(Max)@Id 3.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 105 nC @ 20 V
Vgs(Max) +25V, -10V
InputCapacitance(Ciss)(Max)@Vds 1700 pF @ 400 V
PowerDissipation(Max) 270W (Tc)
OperatingTemperature -55°C ~ 200°C (TJ)
MountingType Through Hole
SupplierDevicePackage HiP247™

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