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SE10FJHM3/H
+BOMDIODE GEN PURP 600V 1A DO219AB
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ManufacturerVishay General Semiconductor - Diodes Division
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Mfr. Part #SE10FJHM3/H
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Datasheet SE10FJHM3/H DataSheet
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Package DO-219AB
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In Stock7790
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Specifications
| Attribute | Value |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 1 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 780 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Capacitance @ Vr F | 7.5pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | DO-219AB (SMF) |
