SI2308BDS-T1-E3

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SI2308BDS-T1-E3

+BOM

MOSFET N-CH 60V 2.3A SOT23-3

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 2.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 156mOhm @ 1.9A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6.8 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 190 pF @ 30 V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Overview

Description

The SI2308BDS-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency applications. Key features include:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 45mΩ (max at VGS = -4.5V)
- Threshold Voltage: -1V (typical)
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include power management, load switching, and battery protection in portable devices (e.g., smartphones, tablets). Its low gate charge and fast switching make it suitable for high-frequency circuits.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI2308BDS-T1-E3 (P-channel MOSFET, 20V, 3.1A) include:
- AO3401A (20V, 4.0A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact compatibility in your application.

Features

The SI2308BDS-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V drain-to-source (VDS).
- Current Rating: -4.3A continuous drain current (ID).
- Low On-Resistance: 60mΩ (max) at VGS = -10V.
- Gate Threshold: -1V to -2.5V (VGS(th)).
- Fast Switching: Low gate charge (Qg = 8.5nC typical).
- Package: SOT-23 (small footprint).
- Applications: Power management, load switching, battery protection.
Compact and efficient, it’s ideal for portable and low-voltage circuits.

Pinout

The SI2308BDS-T1-E3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the power supply (higher voltage for P-channel).
3. Drain (D) – Output connection to the load.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient switching.
Commonly used in power management, load switching, and battery protection circuits.

Application

The SI2308BDS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Consumer Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient designs.

Package

The SI2308BDS-T1-E3 is a MOSFET in a SOT-23-3 (TO-236AB) surface-mount package. This compact, 3-pin package is widely used for low-power applications, offering efficient thermal performance and space-saving design. It is suitable for automated PCB assembly.

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