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SI2318DS-T1-E3
+BOMMOSFET N-CH 40V 3A SOT23-3
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ManufacturerVishay Siliconix
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Mfr. Part #SI2318DS-T1-E3
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Datasheet SI2318DS-T1-E3 DataSheet
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In Stock6120
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Specifications
| Attribute | Value |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Base Product Number | SI2318 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 20 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The SI2318DS-T1-E3 is a N-channel MOSFET, primarily used for switching and amplification applications in electronic circuits. It features a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss when the device is in the 'on' state. With a voltage rating of 30V and a maximum continuous drain current of 10A, it is suitable for various low-voltage applications, including power management and motor control.
This MOSFET is packaged in a compact SO-8 form factor, allowing for efficient space utilization on printed circuit boards (PCBs). The device's gate threshold voltage is relatively low, facilitating easy interfacing with low-voltage control signals.
Overall, the SI2318DS-T1-E3 is favored for its reliability, efficiency, and ease of integration into various electronic systems, making it a popular choice among engineers and designers in the semiconductor industry.
This MOSFET is packaged in a compact SO-8 form factor, allowing for efficient space utilization on printed circuit boards (PCBs). The device's gate threshold voltage is relatively low, facilitating easy interfacing with low-voltage control signals.
Overall, the SI2318DS-T1-E3 is favored for its reliability, efficiency, and ease of integration into various electronic systems, making it a popular choice among engineers and designers in the semiconductor industry.
Equivalent
The SI2318DS-T1-E3 is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and AO3400. Always verify specifications like voltage rating, current rating, and package type before substitution, as they may vary slightly. Additionally, check for compatibility with your specific application requirements.
Features
The SI2318DS-T1-E3 is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Max V_DS of 30V, suitable for various low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 62A at 25°C, allowing high load handling.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 8.6 mΩ at V_GS = 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) range of 1V to 3V, enabling compatibility with low-voltage drive circuits.
5. Package Type: Available in a compact DPAK package, facilitating easy PCB mounting.
6. Fast Switching: High-speed switching capabilities for improved efficiency in switching applications.
7. Thermal Performance: Good thermal management with a high power dissipation capability.
These features make the SI2318DS-T1-E3 ideal for applications in DC-DC converters, motor drivers, and power management systems.
1. Voltage Rating: Max V_DS of 30V, suitable for various low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of up to 62A at 25°C, allowing high load handling.
3. R_DS(on): Low on-resistance (R_DS(on)) of approximately 8.6 mΩ at V_GS = 10V, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: V_GS(th) range of 1V to 3V, enabling compatibility with low-voltage drive circuits.
5. Package Type: Available in a compact DPAK package, facilitating easy PCB mounting.
6. Fast Switching: High-speed switching capabilities for improved efficiency in switching applications.
7. Thermal Performance: Good thermal management with a high power dissipation capability.
These features make the SI2318DS-T1-E3 ideal for applications in DC-DC converters, motor drivers, and power management systems.
Pinout
The SI2318DS-T1-E3 is a N-channel MOSFET from Vishay. It typically comes in a DPAK (TO-252) package, which has a pin count of 3.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate turns the device on or off.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the transistor is on.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. The current exits through the source when the MOSFET is in the on state.
The SI2318DS-T1-E3 is designed for applications in power management, including switching regulators and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for various electronic applications.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching. A voltage applied to the gate turns the device on or off.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the transistor is on.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. The current exits through the source when the MOSFET is in the on state.
The SI2318DS-T1-E3 is designed for applications in power management, including switching regulators and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for various electronic applications.
Manufacturer
The SI2318DS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its innovation in the electronics industry, producing products such as diodes, transistors, capacitors, resistors, and inductors. Vishay serves a wide range of markets, including automotive, telecommunications, industrial, military, aerospace, and consumer electronics. Their commitment to quality and reliability makes them a key player in the semiconductor and electronic component industries. The SI2318DS-T1-E3, specifically, is a N-channel MOSFET, used in various applications such as power management, signal switching, and load control, highlighting Vishay's focus on advanced technology and solutions for modern electronic devices.
Application
The SI2318DS-T1-E3 is an N-channel MOSFET used primarily in power management applications. Its key application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Load Switching: To control power to various electronic devices.
3. Motor Drives: In motor control circuits for efficient operation.
4. Battery Management Systems: For switching applications in battery charging and protection.
5. LED Drivers: In circuits for driving LED lights.
6. Consumer Electronics: Used in various devices requiring efficient power management.
Its low R_DS(on) and fast switching speed make it suitable for these applications.
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Load Switching: To control power to various electronic devices.
3. Motor Drives: In motor control circuits for efficient operation.
4. Battery Management Systems: For switching applications in battery charging and protection.
5. LED Drivers: In circuits for driving LED lights.
6. Consumer Electronics: Used in various devices requiring efficient power management.
Its low R_DS(on) and fast switching speed make it suitable for these applications.
Package
The SI2318DS-T1-E3 is packaged in a SOT-23-3 surface mount package.
