SI3529DV-T1-E3

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SI3529DV-T1-E3

+BOM

MOSFET N/P-CH 40V 2.5A 6-TSOP

  • ManufacturerVishay Siliconix

  • Mfr. Part #SI3529DV-T1-E3

  • Package TSOT-23-6

  • In Stock3280

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Specifications

Attribute Value
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR)
Series TrenchFET®
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain(Id) @ 25°C 2.5A, 1.95A
Rds On(Max) @ Id Vgs 125mOhm @ 2.2A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 7nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 205pF @ 20V
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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