SI4840BDY-T1-E3

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SI4840BDY-T1-E3

+BOM

MOSFET N-CH 40V 19A 8SO

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 19A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 9mOhm @ 12.4A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2000 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Overview

Description

The SI4840BDY-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -10A (continuous drain current)
- Low On-Resistance (RDS(on)): 23mΩ (max at VGS = -10V)
- Gate Threshold Voltage (VGS(th)): -1V to -3V
- Compact Package: PowerPAK® SO-8 (optimized for space-constrained designs)
Ideal for load switching, DC-DC conversion, and battery management in portable electronics, automotive systems, and industrial applications. Its low RDS(on) ensures high efficiency, while the P-channel configuration simplifies circuit design by eliminating the need for a charge pump in high-side switching.
For detailed specs, refer to the datasheet from Vishay.

Equivalent

Equivalent products to the SI4840BDY-T1-E3 (a 40V N-channel MOSFET) include:
- IRL40B209 (International Rectifier)
- FDS6680A (Fairchild/ON Semiconductor)
- AON6407 (Alpha & Omega Semiconductor)
- DMN3010LSS (Diodes Incorporated)
These alternatives offer similar specs (40V, low RDS(on), SOT-23 package). Verify exact parameters for your application.

Features

The SI4840BDY-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.7A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 60mΩ @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -3V
- Fast Switching Speed
- Low Gate Charge (Qg): 8.3nC (typical)
- Power Dissipation (PD): 1.4W
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
This MOSFET is optimized for efficiency and space-constrained designs.

Pinout

The SI4840BDY-T1-E3 is a 20-pin MOSFET in a PowerPAK® SO-8 package.
Key Functions:
- N-channel MOSFET with 40V drain-source voltage.
- 4.5V gate drive (optimized for low-voltage applications).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (up to 100A pulse).
Pin Configuration:
- Pins 1-4, 6-9: Source (S) – internally connected.
- Pin 5: Gate (G) – control terminal.
- Pin 10: Drain (D) – output/power terminal.
Commonly used in DC-DC converters, motor control, and power management circuits.

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