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SI4850EY
+BOMMOSFETs 60V Vds 20V Vgs SO-8
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ManufacturerVishay / Siliconix
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Mfr. Part #SI4850EY
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In Stock25721
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Specifications
| Attribute | Value |
| Standard Pack Qty | 100 |
Overview
Equivalent
The SI4850EY is a dual N-channel MOSFET. Equivalent alternatives include:
- IRF7313 (Vishay)
- FDS6898A (Fairchild/ON Semi)
- DMN2019L (Diodes Inc.)
- NTMFS4927N (ON Semi)
These offer similar specs (30V, 5-6A, low RDS(on)). Verify pinout and parameters for exact compatibility.
- IRF7313 (Vishay)
- FDS6898A (Fairchild/ON Semi)
- DMN2019L (Diodes Inc.)
- NTMFS4927N (ON Semi)
These offer similar specs (30V, 5-6A, low RDS(on)). Verify pinout and parameters for exact compatibility.
Features
The SI4850EY is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.5A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 50mΩ @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Power Dissipation: 2.5W
- Fast Switching Speed
- Compact Package: SOIC-8
Ideal for power management, load switching, and battery protection in portable devices.
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.5A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 50mΩ @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Power Dissipation: 2.5W
- Fast Switching Speed
- Compact Package: SOIC-8
Ideal for power management, load switching, and battery protection in portable devices.
Pinout
The SI4850EY is a dual N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Gate 1 (G1) – Controls MOSFET 1.
2. Source 1 (S1) – Source terminal for MOSFET 1.
3. Drain 1 (D1) – Drain terminal for MOSFET 1.
4. Drain 2 (D2) – Drain terminal for MOSFET 2.
5. Gate 2 (G2) – Controls MOSFET 2.
6. Source 2 (S2) – Source terminal for MOSFET 2.
7. NC (No Connection) – Unused pin.
8. NC (No Connection) – Unused pin.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Dual independent MOSFETs
Used in power switching, DC-DC converters, and motor control.
Pin Functions:
1. Gate 1 (G1) – Controls MOSFET 1.
2. Source 1 (S1) – Source terminal for MOSFET 1.
3. Drain 1 (D1) – Drain terminal for MOSFET 1.
4. Drain 2 (D2) – Drain terminal for MOSFET 2.
5. Gate 2 (G2) – Controls MOSFET 2.
6. Source 2 (S2) – Source terminal for MOSFET 2.
7. NC (No Connection) – Unused pin.
8. NC (No Connection) – Unused pin.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Dual independent MOSFETs
Used in power switching, DC-DC converters, and motor control.
Manufacturer
The SI4850EY is a N-channel MOSFET manufactured by Vishay Intertechnology, a leading global semiconductor and passive electronic component company.
Vishay specializes in producing discrete semiconductors (diodes, MOSFETs, optoelectronics) and passive components (resistors, capacitors, inductors). Founded in 1962, it is known for high-reliability components used in automotive, industrial, computing, and consumer electronics.
The SI4850EY is part of Vishay’s TrenchFET® power MOSFET series, designed for efficient power management in applications like DC-DC converters and load switching.
Vishay specializes in producing discrete semiconductors (diodes, MOSFETs, optoelectronics) and passive components (resistors, capacitors, inductors). Founded in 1962, it is known for high-reliability components used in automotive, industrial, computing, and consumer electronics.
The SI4850EY is part of Vishay’s TrenchFET® power MOSFET series, designed for efficient power management in applications like DC-DC converters and load switching.
Package
The SI4850EY is a PowerPAK® SO-8 package. This surface-mount package is designed for high-power applications, offering efficient thermal performance and compact size. It is commonly used in power management and switching applications. The PowerPAK® SO-8 variant provides improved heat dissipation compared to standard SO-8 packages.
