Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 3.3mOhm @ 25A, 4.5V |
| Vgs(th)(Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 70 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Overview
Description
The SI4862DY-T1-E3 is a dual N-channel MOSFET from Vishay, designed for power management in compact, high-efficiency applications. Key features include:
- Low On-Resistance (RDS(on)): Minimizes power loss.
- Small Footprint: DFN3030 package (3x3mm) for space-constrained designs.
- High Current Handling: Up to 6.3A per channel.
- Low Gate Charge: Enhances switching efficiency.
- Logic-Level Gate Drive: Compatible with 3V/5V control signals.
Common uses include DC-DC converters, load switches, and battery management in portable electronics. Its T1-E3 suffix indicates RoHS compliance and halogen-free packaging.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): Minimizes power loss.
- Small Footprint: DFN3030 package (3x3mm) for space-constrained designs.
- High Current Handling: Up to 6.3A per channel.
- Low Gate Charge: Enhances switching efficiency.
- Logic-Level Gate Drive: Compatible with 3V/5V control signals.
Common uses include DC-DC converters, load switches, and battery management in portable electronics. Its T1-E3 suffix indicates RoHS compliance and halogen-free packaging.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the SI4862DY-T1-E3 (dual N-channel MOSFET) include:
- IRF7324PbF (International Rectifier)
- FDS6898A (Fairchild/ON Semiconductor)
- DMN2019LSDW (Diodes Incorporated)
- BUK9Y3R5-40E (Nexperia)
These alternatives offer similar specifications (e.g., 20V, 5.5mΩ RDS(on), dual-channel). Verify pin compatibility and electrical characteristics for your application.
- IRF7324PbF (International Rectifier)
- FDS6898A (Fairchild/ON Semiconductor)
- DMN2019LSDW (Diodes Incorporated)
- BUK9Y3R5-40E (Nexperia)
These alternatives offer similar specifications (e.g., 20V, 5.5mΩ RDS(on), dual-channel). Verify pin compatibility and electrical characteristics for your application.
Features
The SI4862DY-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 45mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Power Dissipation: 2.5W
- Package: SOIC-8 (Compact surface-mount)
- Low Gate Charge (Qg): 12nC (typ) for fast switching
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable electronics, power supplies, and DC-DC converters.
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 45mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Power Dissipation: 2.5W
- Package: SOIC-8 (Compact surface-mount)
- Low Gate Charge (Qg): 12nC (typ) for fast switching
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable electronics, power supplies, and DC-DC converters.
Pinout
The SI4862DY-T1-E3 is a dual N-channel MOSFET in a SOIC-8 package with 8 pins.
Pin Functions:
- Pins 1, 2, 3 (Drain1, Drain2, Drain3): Connected to the drains of the two MOSFETs.
- Pins 5, 6, 7, 8 (Source1, Source2, Source3, Source4): Connected to the sources of both MOSFETs.
- Pin 4 (Gate1): Gate control for the first MOSFET.
- Pin 5 (Gate2): Gate control for the second MOSFET.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Dual N-channel design for compact power switching.
Commonly used in power management, DC-DC converters, and load switching.
Pin Functions:
- Pins 1, 2, 3 (Drain1, Drain2, Drain3): Connected to the drains of the two MOSFETs.
- Pins 5, 6, 7, 8 (Source1, Source2, Source3, Source4): Connected to the sources of both MOSFETs.
- Pin 4 (Gate1): Gate control for the first MOSFET.
- Pin 5 (Gate2): Gate control for the second MOSFET.
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on))
- Dual N-channel design for compact power switching.
Commonly used in power management, DC-DC converters, and load switching.
Application
The SI4862DY-T1-E3 is a dual N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Automotive Systems – LED drivers, infotainment power circuits.
5. Portable Devices – Smartphones, tablets (efficient power switching).
Its low on-resistance (RDS(on)) and compact package make it ideal for space-constrained, high-efficiency applications.
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Automotive Systems – LED drivers, infotainment power circuits.
5. Portable Devices – Smartphones, tablets (efficient power switching).
Its low on-resistance (RDS(on)) and compact package make it ideal for space-constrained, high-efficiency applications.
Package
The SI4862DY-T1-E3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package. This compact surface-mount package is designed for high-power applications, offering efficient thermal performance and low on-resistance. It's commonly used in power management, DC-DC converters, and load switching. The "T1-E3" suffix indicates it's lead-free and RoHS compliant.
