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SI4946BEY-T1-E3
+BOMMOSFET 2N-CH 60V 6.5A 8-SOIC
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ManufacturerVishay Siliconix
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Mfr. Part #SI4946BEY-T1-E3
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Datasheet SI4946BEY-T1-E3 DataSheet
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Package SOIC-8
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In Stock4646
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 6.5A |
| Rds On(Max) @ Id Vgs | 41mOhm @ 5.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 840pF @ 30V |
| Power - Max | 3.7W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
The SI4946BEY-T1-E3 is a P-Channel MOSFET designed for power management applications. Manufactured by Vishay Siliconix, this MOSFET is part of the TrenchFET® series, known for its low on-resistance and high efficiency. Key features include a maximum drain-source voltage (V_DS) of -20V and a continuous drain current (I_D) of -6.3A, making it suitable for low voltage and high-current applications. It is housed in a compact, surface-mount package, typically the SO-8, which is ideal for space-constrained designs.
The device's primary advantage lies in its ability to handle substantial power loads while minimizing energy loss, which is critical for battery-operated devices and other energy-efficient systems. Its fast switching speed also makes it suitable for applications requiring high-speed switching. The MOSFET is commonly used in DC-DC converters, load switching, and power management functions in consumer electronics, automotive systems, and industrial equipment. Its robust design ensures reliability and performance stability across various operating conditions.
The device's primary advantage lies in its ability to handle substantial power loads while minimizing energy loss, which is critical for battery-operated devices and other energy-efficient systems. Its fast switching speed also makes it suitable for applications requiring high-speed switching. The MOSFET is commonly used in DC-DC converters, load switching, and power management functions in consumer electronics, automotive systems, and industrial equipment. Its robust design ensures reliability and performance stability across various operating conditions.
Equivalent
The SI4946BEY-T1-E3 is a MOSFET transistor. Equivalent products might include MOSFETs with similar specifications such as voltage, current, power ratings, and package type. Some potential equivalents could be from manufacturers like Infineon, ON Semiconductor, or Fairchild. For specific part numbers, you'd need to compare datasheets to ensure compatibility with your requirements. Always double-check parameters like threshold voltage, Rds(on), and thermal characteristics.
Features
The SI4946BEY-T1-E3 is a dual N-channel MOSFET designed for use in various electronic applications. Key features include:
1. N-Channel Configuration: This MOSFET consists of two independent N-channel MOSFETs, allowing for efficient high-speed switching applications.
2. Voltage Rating: It typically offers a drain-source voltage (V_DS) rating suitable for moderate power applications, often around 60V.
3. Current Handling: The device can handle relatively high continuous drain current, making it suitable for applications requiring efficient power management.
4. Low On-Resistance: The MOSFET is designed with low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation.
5. Package Type: It usually comes in a compact package such as the SO-8, which is convenient for PCB mounting and space-constrained designs.
6. Thermal Performance: Good thermal performance ensures reliability in temperature-variable environments.
7. Applications: Common applications include DC-DC converters, power management in portable devices, and motor control circuits.
This combination of features makes the SI4946BEY-T1-E3 suitable for a wide range of electronic applications requiring efficient and reliable switching.
1. N-Channel Configuration: This MOSFET consists of two independent N-channel MOSFETs, allowing for efficient high-speed switching applications.
2. Voltage Rating: It typically offers a drain-source voltage (V_DS) rating suitable for moderate power applications, often around 60V.
3. Current Handling: The device can handle relatively high continuous drain current, making it suitable for applications requiring efficient power management.
4. Low On-Resistance: The MOSFET is designed with low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation.
5. Package Type: It usually comes in a compact package such as the SO-8, which is convenient for PCB mounting and space-constrained designs.
6. Thermal Performance: Good thermal performance ensures reliability in temperature-variable environments.
7. Applications: Common applications include DC-DC converters, power management in portable devices, and motor control circuits.
This combination of features makes the SI4946BEY-T1-E3 suitable for a wide range of electronic applications requiring efficient and reliable switching.
Pinout
The SI4946BEY-T1-E3 is a dual N-channel MOSFET. It comes in an SO-8 package, which typically has 8 pins. The device is designed for use in applications where low on-resistance and fast switching are required.
Pin Count and Functions:
1. Pins 1, 2, 3 (Source 1): Connected to the source terminal of the first MOSFET.
2. Pin 4 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 5 (Gate 2): Gate terminal for the second MOSFET.
4. Pins 6, 7, 8 (Source 2): Connected to the source terminal of the second MOSFET.
The drains of the two MOSFETs (internally) are connected together, which is common in dual MOSFET configurations. The device is generally used in power management, load switching, and motor control applications due to its efficiency and compact form factor.
Pin Count and Functions:
1. Pins 1, 2, 3 (Source 1): Connected to the source terminal of the first MOSFET.
2. Pin 4 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 5 (Gate 2): Gate terminal for the second MOSFET.
4. Pins 6, 7, 8 (Source 2): Connected to the source terminal of the second MOSFET.
The drains of the two MOSFETs (internally) are connected together, which is common in dual MOSFET configurations. The device is generally used in power management, load switching, and motor control applications due to its efficiency and compact form factor.
Manufacturer
The SI4946BEY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, the company has grown to become one of the largest manufacturers in the electronics industry, providing components that are essential for a wide range of products and applications, from industrial and consumer electronics to automotive and telecommunications. Vishay's portfolio includes products like diodes, MOSFETs, resistors, capacitors, and inductors, among others, making it a key player in the semiconductor and passive components market.
Application
The SI4946BEY-T1-E3 is a dual N-channel MOSFET designed for use in various applications. Key areas include power management systems, DC-DC converters, and load switching. It is suitable for battery-powered devices, motor control circuits, and synchronous rectification applications due to its low on-resistance and fast switching capabilities. The component is also used in consumer electronics, telecom equipment, and automotive systems, where efficient power handling and compact design are critical.
Package
The SI4946BEY-T1-E3 is a surface-mount device (SMD) in a PowerPAK SO-8 package. This package is designed for efficient thermal performance and is commonly used in power management applications.
