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SI5509DC-T1-E3
+BOMMOSFET N/P-CH 20V 6.1A 1206-8
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ManufacturerVishay Siliconix
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Mfr. Part #SI5509DC-T1-E3
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Package 8-SMD, Flat Lead
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In Stock2461
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Specifications
| Attribute | Value |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6.1A, 4.8A |
| Rds On(Max) @ Id Vgs | 52mOhm @ 5A, 4.5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6.6nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 455pF @ 10V |
| Power - Max | 4.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
