SI7113DN-T1-E3

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SI7113DN-T1-E3

+BOM

MOSFET P-CH 100V 13.2A PPAK

  • ManufacturerVishay Siliconix

  • Mfr. Part #SI7113DN-T1-E3

  • In Stock11024

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Specifications

Attribute Value
Series TrenchFET®
Part Status Obsolete
Base Product Number SI7113
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Packaging Cut Tape (CT), Tape & Reel (TR)

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