SI7469DP-T1-E3

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SI7469DP-T1-E3

+BOM

MOSFET P-CH 80V 28A PPAK SO-8

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 28A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 25mOhm @ 10.2A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 160 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4700 pF @ 40 V
Power Dissipation (Max) 5.2W (Ta), 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8

Overview

Features

The SI7469DP-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDSS)
- Current Rating: -11.5A (Continuous Drain Current, ID)
- Low On-Resistance: 28mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -2.5V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Applications: Power management, load switching, DC-DC conversion
This MOSFET is optimized for high efficiency and thermal performance in space-constrained designs.

Pinout

The SI7469DP-T1-E3 is a P-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (though typically only 4 are functional; others are for thermal enhancement).
- Function: Designed for power switching applications, it features:
- Low on-resistance (RDS(on)): Enhances efficiency.
- High current handling (up to -23A continuous).
- Voltage rating: -30V (drain-to-source, VDS).
- Logic-level gate drive (compatible with -4.5V to -20V VGS).
Common uses include load switching, DC-DC conversion, and battery management. The extra pins improve heat dissipation.

Package

The SI7469DP-T1-E3 is a PowerPAK SO-8 package, designed for surface-mount applications. It features a compact, thermally efficient design suitable for power MOSFETs, enhancing performance in high-current and high-voltage applications. The package ensures low on-resistance and improved heat dissipation.

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