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SI7489DP-T1-E3
+BOMMOSFET P-CH 100V 28A PPAK SO-8
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ManufacturerVishay Siliconix
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Mfr. Part #SI7489DP-T1-E3
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Datasheet SI7489DP-T1-E3 DataSheet
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In Stock22285
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Specifications
| Attribute | Value |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 41mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 160 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4600 pF @ 50 V |
| PowerDissipation(Max) | 5.2W (Ta), 83W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Overview
Description
The SI7489DP-T1-E3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications. It is manufactured by Vishay Siliconix, a well-known supplier of discrete semiconductors and passive electronic components. The MOSFET features advanced trench technology, providing low on-resistance and high efficiency, making it suitable for power management applications.
Key specifications include a drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 60A, and a low gate charge, which enables fast switching and reduced power losses. The SI7489DP-T1-E3 is housed in a compact PowerPAK SO-8 package, allowing for efficient thermal performance and space-saving on circuit boards.
This MOSFET is commonly used in DC-DC converters, motor drives, and other applications requiring high power density and efficiency. Its robust design ensures reliable operation in various environments, making it a versatile choice for engineers looking to optimize power delivery in their electronic systems.
Key specifications include a drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 60A, and a low gate charge, which enables fast switching and reduced power losses. The SI7489DP-T1-E3 is housed in a compact PowerPAK SO-8 package, allowing for efficient thermal performance and space-saving on circuit boards.
This MOSFET is commonly used in DC-DC converters, motor drives, and other applications requiring high power density and efficiency. Its robust design ensures reliable operation in various environments, making it a versatile choice for engineers looking to optimize power delivery in their electronic systems.
Equivalent
The SI7489DP-T1-E3 is a MOSFET transistor. Equivalent products include:
1. IRF530 - by International Rectifier
2. NTD4906N - by ON Semiconductor
3. FDP8870 - by Fairchild Semiconductor
4. 2N7002 - by NXP Semiconductors
These are similar in terms of functionality, but check specific parameters like voltage, current ratings, and package type for exact equivalence.
1. IRF530 - by International Rectifier
2. NTD4906N - by ON Semiconductor
3. FDP8870 - by Fairchild Semiconductor
4. 2N7002 - by NXP Semiconductors
These are similar in terms of functionality, but check specific parameters like voltage, current ratings, and package type for exact equivalence.
Features
The SI7489DP-T1-E3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its efficiency and performance in power management applications. Key features include:
1. N-Channel MOSFET: It is an N-channel MOSFET, often used for high-speed switching applications.
2. Low On-Resistance: It offers low on-state resistance, which minimizes power loss and improves efficiency.
3. High Power Capability: The device can handle significant power levels, suitable for various power management tasks.
4. Fast Switching: Designed for fast switching speed, enabling efficient energy usage and reduced power dissipation.
5. Package Type: Available in a PowerPAK SO-8 package, which provides a small footprint and efficient thermal performance.
6. Voltage and Current Ratings: Typically supports a range of voltage and current levels conducive for use in consumer electronics, automotive, and industrial applications.
7. Thermal Performance: Excellent thermal resistance characteristics, aiding in reliable performance under high-temperature conditions.
These features make the SI7489DP-T1-E3 suitable for applications requiring efficient power conversion and management.
1. N-Channel MOSFET: It is an N-channel MOSFET, often used for high-speed switching applications.
2. Low On-Resistance: It offers low on-state resistance, which minimizes power loss and improves efficiency.
3. High Power Capability: The device can handle significant power levels, suitable for various power management tasks.
4. Fast Switching: Designed for fast switching speed, enabling efficient energy usage and reduced power dissipation.
5. Package Type: Available in a PowerPAK SO-8 package, which provides a small footprint and efficient thermal performance.
6. Voltage and Current Ratings: Typically supports a range of voltage and current levels conducive for use in consumer electronics, automotive, and industrial applications.
7. Thermal Performance: Excellent thermal resistance characteristics, aiding in reliable performance under high-temperature conditions.
These features make the SI7489DP-T1-E3 suitable for applications requiring efficient power conversion and management.
Pinout
The SI7489DP-T1-E3 is a N-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a PowerPAK SO-8 package, which has 8 pins. Here is a concise overview of its pin configuration and functions:
1. Pin Count: 8 pins
2. Pin Functions:
- Pins 1, 2, 3: Source (S) - These pins are connected to the source terminal of the MOSFET.
- Pin 4: Gate (G) - This pin is connected to the gate terminal, which controls the MOSFET's switching state.
- Pins 5, 6, 7, 8: Drain (D) - These pins are connected to the drain terminal. They are internally connected together to manage higher current capacity.
The device is commonly used for switching and amplification purposes in power management applications, offering features like low on-resistance and fast switching.
1. Pin Count: 8 pins
2. Pin Functions:
- Pins 1, 2, 3: Source (S) - These pins are connected to the source terminal of the MOSFET.
- Pin 4: Gate (G) - This pin is connected to the gate terminal, which controls the MOSFET's switching state.
- Pins 5, 6, 7, 8: Drain (D) - These pins are connected to the drain terminal. They are internally connected together to manage higher current capacity.
The device is commonly used for switching and amplification purposes in power management applications, offering features like low on-resistance and fast switching.
Manufacturer
The SI7489DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company has grown to become one of the world's largest producers of these components, serving a broad range of industries including automotive, industrial, computing, consumer, telecommunications, and military. Vishay's product portfolio includes MOSFETs, diodes, optoelectronics, resistors, capacitors, and inductors, among others. The company is known for its focus on innovation, quality, and reliability, making it a key player in the electronics manufacturing sector.
Application
The SI7489DP-T1-E3 is a power MOSFET primarily used in applications requiring efficient power management. Its key application areas include:
1. DC-DC Converters: Utilized in power supply circuits for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors in various consumer electronics and industrial applications.
3. Load Switches: Acts as a switch for managing loads in power distribution networks.
4. Power Supplies: Used in the design of efficient power supply units for electronics.
5. Battery Management: Applied in battery protection and management systems for safe and efficient charging and discharging.
Its low on-resistance and high current handling capabilities make it ideal for these applications.
1. DC-DC Converters: Utilized in power supply circuits for efficient voltage regulation.
2. Motor Drives: Suitable for driving motors in various consumer electronics and industrial applications.
3. Load Switches: Acts as a switch for managing loads in power distribution networks.
4. Power Supplies: Used in the design of efficient power supply units for electronics.
5. Battery Management: Applied in battery protection and management systems for safe and efficient charging and discharging.
Its low on-resistance and high current handling capabilities make it ideal for these applications.
Package
The SI7489DP-T1-E3 is a power MOSFET in a DPAK (TO-252) package. This package type is commonly used for surface-mount applications, providing a compact and efficient way to manage power in electronic circuits. The DPAK design facilitates effective heat dissipation and reliable performance in high-power applications.
