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SI7850DP-T1-E3
+BOMMOSFET N-CH 60V 6.2A PPAK SO-8
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ManufacturerVishay Siliconix
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Mfr. Part #SI7850DP-T1-E3
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Package PowerPAK-SO-8
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In Stock3050
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 6.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 22mOhm @ 10.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Overview
Description
The SI7850DP-T1-E3 is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. This component is part of the TrenchFET® series, known for high efficiency and low on-resistance, making it suitable for power management applications. It is typically used in DC-DC converters, load switches, and battery protection circuits.
Key specifications include:
1. Type: N-channel MOSFET.
2. Voltage Rating: It can handle substantial voltage levels, tailored for specific applications.
3. Current Handling: Capable of managing significant current loads, beneficial for power-intensive tasks.
4. Package: Available in an SO-8 package, which is compact and aids in efficient heat dissipation and easy integration on printed circuit boards (PCBs).
The SI7850DP-T1-E3's design emphasizes low gate charge and fast switching speeds, which contribute to reduced power loss and increased system efficiency. This makes it a preferred choice in modern electronic devices where energy efficiency and compactness are crucial.
Key specifications include:
1. Type: N-channel MOSFET.
2. Voltage Rating: It can handle substantial voltage levels, tailored for specific applications.
3. Current Handling: Capable of managing significant current loads, beneficial for power-intensive tasks.
4. Package: Available in an SO-8 package, which is compact and aids in efficient heat dissipation and easy integration on printed circuit boards (PCBs).
The SI7850DP-T1-E3's design emphasizes low gate charge and fast switching speeds, which contribute to reduced power loss and increased system efficiency. This makes it a preferred choice in modern electronic devices where energy efficiency and compactness are crucial.
Equivalent
The SI7850DP-T1-E3 is a power MOSFET originally from Vishay. Equivalent or similar products could include other N-channel MOSFETs with similar specifications: low Rds(on), similar voltage and current ratings. Examples might include: IRF7850 from Infineon, FDS6679 from ON Semiconductor, or NTD5867NL from ON Semiconductor. Ensure the specifications such as Vds, Id, Rds(on), and package type match your requirements when considering alternatives.
Features
The SI7850DP-T1-E3 is a dual N-channel MOSFET designed for efficient power management applications. Key features of this component include:
1. Low On-Resistance: It offers a low on-resistance, which minimizes power loss and enhances efficiency.
2. Dual N-Channel: The device integrates two N-channel MOSFETs in a single package, optimizing board space and simplifying design.
3. Fast Switching: It supports fast switching speeds, which is crucial for high-frequency applications and reducing power consumption.
4. Compact Package: The MOSFET comes in a compact, surface-mount package (PowerPAK SO-8), allowing for integration in space-constrained designs.
5. High Current Handling: It is capable of handling high current levels, making it suitable for demanding power applications.
6. Thermal Performance: The device is designed for efficient thermal management, enabling reliable operation under varying temperature conditions.
7. RoHS Compliant: It is compliant with Restriction of Hazardous Substances (RoHS) standards, ensuring environmentally friendly manufacturing.
These features make the SI7850DP-T1-E3 ideal for use in power management circuitry, including DC-DC converters, load switches, and other applications requiring efficient power handling.
1. Low On-Resistance: It offers a low on-resistance, which minimizes power loss and enhances efficiency.
2. Dual N-Channel: The device integrates two N-channel MOSFETs in a single package, optimizing board space and simplifying design.
3. Fast Switching: It supports fast switching speeds, which is crucial for high-frequency applications and reducing power consumption.
4. Compact Package: The MOSFET comes in a compact, surface-mount package (PowerPAK SO-8), allowing for integration in space-constrained designs.
5. High Current Handling: It is capable of handling high current levels, making it suitable for demanding power applications.
6. Thermal Performance: The device is designed for efficient thermal management, enabling reliable operation under varying temperature conditions.
7. RoHS Compliant: It is compliant with Restriction of Hazardous Substances (RoHS) standards, ensuring environmentally friendly manufacturing.
These features make the SI7850DP-T1-E3 ideal for use in power management circuitry, including DC-DC converters, load switches, and other applications requiring efficient power handling.
Pinout
The SI7850DP-T1-E3 is a N-channel MOSFET. It typically comes in a PowerPAK SO-8 package, which has 8 pins. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits. It is used for high-speed switching applications due to its low on-resistance and high efficiency. Here is a concise breakdown of the pin functions:
1. Drain (D): Connects to the load. There are multiple pins (usually 3 or 4) for the drain to facilitate high current flow.
2. Source (S): Connects to ground or the lower potential side of the circuit. Similar to the drain, there are usually multiple pins for the source.
3. Gate (G): Controls the switching operation of the MOSFET. A voltage applied here turns the device on or off.
This MOSFET is typically used in applications such as DC-DC converters, load switching, and power management in various electronic devices.
1. Drain (D): Connects to the load. There are multiple pins (usually 3 or 4) for the drain to facilitate high current flow.
2. Source (S): Connects to ground or the lower potential side of the circuit. Similar to the drain, there are usually multiple pins for the source.
3. Gate (G): Controls the switching operation of the MOSFET. A voltage applied here turns the device on or off.
This MOSFET is typically used in applications such as DC-DC converters, load switching, and power management in various electronic devices.
Manufacturer
The SI7850DP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a multi-national company that produces discrete semiconductors and passive electronic components. Founded in 1962, Vishay has grown through acquisitions and expansions to become one of the world's largest manufacturers of these components, serving markets such as automotive, industrial, telecommunications, computing, consumer, and medical. Vishay's product range includes a variety of components such as diodes, MOSFETs, optoelectronics, capacitors, resistors, and inductors, among others. The company is known for its commitment to innovation and quality, providing components that are critical to the functioning of electronic devices across various industries.
Application
The SI7850DP-T1-E3 is a MOSFET commonly used in power management applications. Its key application areas include DC-DC converters, power supplies, motor drives, and load switches. It is often used in computing, telecommunications, and consumer electronics to enhance energy efficiency and thermal performance due to its low RDS(on) and high current handling capabilities. Additionally, its small package size makes it suitable for compact designs requiring effective heat dissipation and efficient power management.
Package
The SI7850DP-T1-E3 is a power MOSFET package from Vishay Siliconix. It typically comes in a PowerPAK SO-8 package, which is a surface-mount package designed for efficient thermal performance and compactness, making it suitable for high-power applications.
