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SPD04N60C3
+BOMMOSFET N-CH 600V 4.5A TO252-3
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ManufacturerInfineon Technologies
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Mfr. Part #SPD04N60C3
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Datasheet SPD04N60C3 DataSheet
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In Stock11607
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Specifications
| Attribute | Value |
| Supplier | Infineon Technologies |
| Package / Case | Bulk |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 950mOhm @ 2.8A, 10V |
| Vgs(th)(Max) @ Id | 3.9V @ 200µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 490 pF @ 25 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
Overview
Description
The SPD04N60C3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power conversion applications. Part of Infineon's CoolMOS C3 series, it is engineered to handle high voltage and current with minimal power loss. This component is typically used in switching power supplies, motor drives, and other electronic devices requiring efficient power management.
Key features include a voltage rating of 600V and a continuous drain current of 4A. It exhibits low on-resistance, ensuring reduced conduction losses. The device also benefits from fast switching capabilities, contributing to increased efficiency in high-frequency applications. Its robust design allows for stable performance under varying temperature and load conditions.
The SPD04N60C3's compact package and thermal characteristics make it suitable for compact and heat-sensitive environments. When integrating this MOSFET into a circuit, proper thermal management and consideration of its electrical characteristics are crucial to ensure optimal performance and reliability.
Key features include a voltage rating of 600V and a continuous drain current of 4A. It exhibits low on-resistance, ensuring reduced conduction losses. The device also benefits from fast switching capabilities, contributing to increased efficiency in high-frequency applications. Its robust design allows for stable performance under varying temperature and load conditions.
The SPD04N60C3's compact package and thermal characteristics make it suitable for compact and heat-sensitive environments. When integrating this MOSFET into a circuit, proper thermal management and consideration of its electrical characteristics are crucial to ensure optimal performance and reliability.
Equivalent
The SPD04N60C3 is a power MOSFET, and equivalent products might include similar N-channel MOSFETs with comparable specifications. Some potential equivalents include the STMicroelectronics STP4NK60Z, ON Semiconductor NTP65N06, and Vishay Siliconix SiHH26N60E. When selecting an equivalent, ensure that the voltage, current ratings, and other key specifications match or exceed those of the SPD04N60C3. Always refer to the datasheets for detailed comparisons.
Features
The SPD04N60C3 is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) up to 4A.
3. R_DS(on): It features a low on-resistance, typically around 1.4 Ohm, minimizing power loss and heat generation.
4. Technology: Based on Infineon's CoolMOS™ technology, offering excellent efficiency and fast switching capabilities.
5. Package: Available in standard TO-220 package, facilitating easy thermal management and mounting.
6. Temperature Range: It operates within a wide temperature range, suitable for various environmental conditions.
7. Applications: Ideal for use in power supplies, lighting, and motor control due to its robustness and efficiency.
8. Switching Performance: Fast switching speeds reduce switching losses, enhancing performance in high-frequency applications.
9. Reliability: Built with high-quality materials ensuring durability and a long operational lifespan.
These features make the SPD04N60C3 a versatile choice for designers seeking efficient, high-voltage power transistors.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) up to 4A.
3. R_DS(on): It features a low on-resistance, typically around 1.4 Ohm, minimizing power loss and heat generation.
4. Technology: Based on Infineon's CoolMOS™ technology, offering excellent efficiency and fast switching capabilities.
5. Package: Available in standard TO-220 package, facilitating easy thermal management and mounting.
6. Temperature Range: It operates within a wide temperature range, suitable for various environmental conditions.
7. Applications: Ideal for use in power supplies, lighting, and motor control due to its robustness and efficiency.
8. Switching Performance: Fast switching speeds reduce switching losses, enhancing performance in high-frequency applications.
9. Reliability: Built with high-quality materials ensuring durability and a long operational lifespan.
These features make the SPD04N60C3 a versatile choice for designers seeking efficient, high-voltage power transistors.
Pinout
The SPD04N60C3 is a power MOSFET semiconductor device. It typically comes in a TO-220 package and has three pins. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the current to flow between the drain and source.
2. Drain (D): This pin is the terminal where the current enters the MOSFET from the load.
3. Source (S): This is the terminal where the current exits the MOSFET.
The SPD04N60C3 is designed for high-voltage applications and features a low on-resistance, making it suitable for efficient power conversion and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the current to flow between the drain and source.
2. Drain (D): This pin is the terminal where the current enters the MOSFET from the load.
3. Source (S): This is the terminal where the current exits the MOSFET.
The SPD04N60C3 is designed for high-voltage applications and features a low on-resistance, making it suitable for efficient power conversion and switching applications.
Manufacturer
The SPD04N60C3 is manufactured by Infineon Technologies. Infineon Technologies is a German semiconductor manufacturer that designs, develops, produces, and markets a wide range of semiconductor products. The company is known for its focus on innovative solutions for energy efficiency, mobility, and security. Infineon operates in various sectors, including automotive, industrial electronics, power management, wireless and wired communications, and digital security solutions. It is recognized as one of the leading companies in the semiconductor industry worldwide.
Application
The SPD04N60C3 is a power MOSFET designed for high-efficiency power conversion applications. Its primary application areas include:
1. Switched-Mode Power Supplies (SMPS): Utilized in both consumer electronics and industrial power supplies for efficiency and reliability.
2. Motor Control: Applied in various motor drives due to its ability to handle high voltages and currents.
3. DC-DC Converters: Offers efficient power conversion for voltage regulation in electronic devices.
4. Lighting Ballasts: Used in controlling and stabilizing current in lighting systems.
5. Solar Inverters: Employed in photovoltaic systems for converting DC to AC efficiently.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Switched-Mode Power Supplies (SMPS): Utilized in both consumer electronics and industrial power supplies for efficiency and reliability.
2. Motor Control: Applied in various motor drives due to its ability to handle high voltages and currents.
3. DC-DC Converters: Offers efficient power conversion for voltage regulation in electronic devices.
4. Lighting Ballasts: Used in controlling and stabilizing current in lighting systems.
5. Solar Inverters: Employed in photovoltaic systems for converting DC to AC efficiently.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The SPD04N60C3 is a power MOSFET typically available in a TO-252 package, also known as DPAK.
