STB37N60DM2AG

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STB37N60DM2AG

+BOM

MOSFET N-CH 600V 28A D2PAK

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Specifications

Attribute Value
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, MDmesh™ DM2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 28A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 110mOhm @ 14A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 54 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 2400 pF @ 100 V
Power Dissipation (Max) 210W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Overview

Description

The STB37N60DM2AG is a 600V, 37A N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): 70mΩ (typ.) at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-frequency operations like SMPS, motor drives, and inverters.
- Avalanche-Rugged: Enhanced reliability under high-energy stress.
- Low Gate Charge (Qg): Improves switching efficiency.
- TO-263 (D²PAK) Package: Suitable for high-power applications with good thermal performance.
Ideal for AC-DC converters, industrial power systems, and automotive applications, it balances performance with robustness. Always refer to the datasheet for detailed specs and application guidelines.

Equivalent

Equivalent products to the STB37N60DM2AG (600V, 37A, N-channel MOSFET) include:
- STP36N60DM2AG (600V, 36A)
- IRFP460 (500V, 20A, higher RDS(on))
- FDPF33N50 (500V, 33A)
- IXFH36N60P (600V, 36A)
Check voltage, current, and package compatibility before substitution. For exact replacements, consider STMicroelectronics' alternatives like STB36N60DM2AG.

Pinout

The STB37N60DM2AG is a 600V, 37A N-channel Power MOSFET in a TO-263 (D²PAK) package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connects to ground or return path.
Key Features:
- Low on-resistance (RDS(on) = 85mΩ max).
- Fast switching for power applications.
- Used in SMPS, motor drives, and inverters.
The TO-263 package provides efficient thermal performance with a metal tab for heat dissipation.

Manufacturer

The STB37N60DM2AG is manufactured by STMicroelectronics, a multinational semiconductor company headquartered in Geneva, Switzerland.
STMicroelectronics specializes in designing and producing a wide range of semiconductor products, including power transistors, microcontrollers, sensors, and integrated circuits for automotive, industrial, and consumer electronics. The company is known for its innovation in energy-efficient and high-performance electronic solutions.
The STB37N60DM2AG is a 600V, 37A MDmesh™ DM2 N-channel power MOSFET, designed for high-efficiency switching applications like power supplies and motor drives.

Application

The STB37N60DM2AG is a 600V, 36A N-channel Power MOSFET designed for high-efficiency power switching applications. Key application areas include:
- Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
- Motor Control – Drives in industrial, automotive, and appliance systems.
- Lighting Solutions – LED drivers and ballast control.
- Renewable Energy – Inverters for solar and wind power systems.
- Industrial Automation – Power management in robotics and control units.
Its low on-resistance (RDS(on)) and fast switching make it ideal for energy-efficient, high-power applications.

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