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STB80N20M5
+BOMMOSFET N-CH 200V 61A D2PAK
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ManufacturerSTMicroelectronics
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Mfr. Part #STB80N20M5
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Datasheet STB80N20M5 DataSheet
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Package TO-263-3
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In Stock6490
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 61A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 23mOhm @ 30.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 104 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4329 pF @ 50 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Overview
Description
The STB80N20M5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It is part of the MDmesh™ V Power MOSFET series by STMicroelectronics. This device features a breakdown voltage of 200V and a continuous drain current of 80A, making it suitable for demanding power applications. It offers excellent performance characteristics, including low on-state resistance (R_DS(on)), which minimizes conduction losses and enhances energy efficiency.
The STB80N20M5 is housed in a TO-220 package, providing a balance between thermal performance and space-saving design, suitable for heat dissipation in high-power circuits. Its design supports fast switching speeds, reducing switching losses and improving overall system efficiency. This MOSFET is typically used in applications like power supplies, motor controllers, converters, and other systems requiring reliable and efficient power management. Additionally, it incorporates advanced technology for improved ruggedness and reliability under varying operational conditions, providing a durable solution for industrial and commercial use.
The STB80N20M5 is housed in a TO-220 package, providing a balance between thermal performance and space-saving design, suitable for heat dissipation in high-power circuits. Its design supports fast switching speeds, reducing switching losses and improving overall system efficiency. This MOSFET is typically used in applications like power supplies, motor controllers, converters, and other systems requiring reliable and efficient power management. Additionally, it incorporates advanced technology for improved ruggedness and reliability under varying operational conditions, providing a durable solution for industrial and commercial use.
Equivalent
The STB80N20M5 is a power MOSFET from STMicroelectronics. Equivalent products may include the IRF3205 from Infineon Technologies, NTD20N06 from ON Semiconductor, and FDP023N08 from Fairchild Semiconductor. When selecting an equivalent, ensure the voltage, current, Rds(on), and package specifications closely match your requirements for proper functionality in your application.
Features
The STB80N20M5 is a power MOSFET belonging to the MDmesh™ M5 series, designed by STMicroelectronics. Key features include:
1. N-channel Enhancement Mode: Offers efficient switching and conduction.
2. Voltage and Current Ratings: Capable of handling a drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of 80A.
3. Low On-State Resistance: Features a low R_ds(on) of 0.0072 ohms, minimizing power losses during operation.
4. Fast Switching: Designed for high-speed performance, making it suitable for high-frequency applications.
5. Energy Efficiency: Optimized for reduced gate charge (Q_g), contributing to energy savings.
6. Robust Design: Offers a high avalanche capability and ruggedness.
7. Thermal Performance: Features an efficient thermal design to manage heat dissipation effectively.
8. Package: Available in a D2PAK package, providing good thermal performance and ease of mounting.
These features make it suitable for applications in power converters, switching power supplies, and motor drives.
1. N-channel Enhancement Mode: Offers efficient switching and conduction.
2. Voltage and Current Ratings: Capable of handling a drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of 80A.
3. Low On-State Resistance: Features a low R_ds(on) of 0.0072 ohms, minimizing power losses during operation.
4. Fast Switching: Designed for high-speed performance, making it suitable for high-frequency applications.
5. Energy Efficiency: Optimized for reduced gate charge (Q_g), contributing to energy savings.
6. Robust Design: Offers a high avalanche capability and ruggedness.
7. Thermal Performance: Features an efficient thermal design to manage heat dissipation effectively.
8. Package: Available in a D2PAK package, providing good thermal performance and ease of mounting.
These features make it suitable for applications in power converters, switching power supplies, and motor drives.
Pinout
The STB80N20M5 is a power MOSFET from STMicroelectronics. It comes in a D²PAK package, which typically has a 3-pin configuration. The primary pins and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and the source.
2. Drain (D): The drain is where the current enters the MOSFET from the load. For the STB80N20M5, the drain is usually connected to a high voltage point in the circuit.
3. Source (S): This pin acts as the exit point for current flowing through the MOSFET. It's typically connected to ground or a lower voltage point.
Additionally, there might be a tab that is internally connected to the drain, which helps in heat dissipation when mounted onto a heatsink. The STB80N20M5 is commonly used in applications requiring high-speed switching and high efficiency.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and the source.
2. Drain (D): The drain is where the current enters the MOSFET from the load. For the STB80N20M5, the drain is usually connected to a high voltage point in the circuit.
3. Source (S): This pin acts as the exit point for current flowing through the MOSFET. It's typically connected to ground or a lower voltage point.
Additionally, there might be a tab that is internally connected to the drain, which helps in heat dissipation when mounted onto a heatsink. The STB80N20M5 is commonly used in applications requiring high-speed switching and high efficiency.
Manufacturer
The STB80N20M5 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. It operates in various sectors, including automotive, industrial, personal electronics, and communications equipment, providing solutions that facilitate smart driving, smart industry, smart home and city, and smart things. The company is known for its focus on innovation and sustainability in electronics.
Application
The STB80N20M5, a power MOSFET, is used in various applications due to its high efficiency and robust performance. Key areas include:
1. Automotive Electronics: For controlling motors and managing power distribution systems.
2. Power Supplies: In switch-mode power supplies (SMPS) for efficient power conversion.
3. Industrial Automation: For driving inductive loads such as solenoids and relays.
4. Renewable Energy Systems: Used in photovoltaic inverters and wind turbine inverters.
5. Consumer Electronics: In power management for devices like TVs and home appliances.
Its main advantages are low on-resistance and high-speed switching, making it suitable for applications requiring efficient power management.
1. Automotive Electronics: For controlling motors and managing power distribution systems.
2. Power Supplies: In switch-mode power supplies (SMPS) for efficient power conversion.
3. Industrial Automation: For driving inductive loads such as solenoids and relays.
4. Renewable Energy Systems: Used in photovoltaic inverters and wind turbine inverters.
5. Consumer Electronics: In power management for devices like TVs and home appliances.
Its main advantages are low on-resistance and high-speed switching, making it suitable for applications requiring efficient power management.
Package
The STB80N20M5 is an N-channel MOSFET, and it comes in a D²PAK (TO-263) package. This package type is suited for surface-mount technology, providing efficient thermal performance and compactness for use in power semiconductor applications.
